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Hefei Purple Horn E-Commerce Co., Ltd.

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China KTP 2SB772 PNP Power Transistor Silicon Based Designed for High Current Output
China KTP 2SB772 PNP Power Transistor Silicon Based Designed for High Current Output

  1. China KTP 2SB772 PNP Power Transistor Silicon Based Designed for High Current Output

KTP 2SB772 PNP Power Transistor Silicon Based Designed for High Current Output

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Current - Collector Cutoff 1uA
Emitter-Base Voltage(Vebo) 6V
Pd - Power Dissipation 1.25W
Transition frequency(fT) 50MHz
type PNP
Number 1 PNP
Current - Collector(Ic) 3A
Collector - Emitter Voltage VCEO 30V
Description Bipolar (BJT) Transistor PNP 30V 3A 50MHz 1.25W Surface Mount SOT-89
Mfr. Part # 2SB772
Package SOT-89
Model Number 2SB772

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  1. Product Details
  2. Company Details

Product Specification

Current - Collector Cutoff 1uA Emitter-Base Voltage(Vebo) 6V
Pd - Power Dissipation 1.25W Transition frequency(fT) 50MHz
type PNP Number 1 PNP
Current - Collector(Ic) 3A Collector - Emitter Voltage VCEO 30V
Description Bipolar (BJT) Transistor PNP 30V 3A 50MHz 1.25W Surface Mount SOT-89 Mfr. Part # 2SB772
Package SOT-89 Model Number 2SB772

Product Overview

The 2SB772 is a Silicon PNP Power Transistor designed for high current output up to 3A. It features low saturation voltage and serves as a complement to the 2SD882. This transistor is suitable for applications requiring efficient power handling.

Product Attributes

  • Brand: KTP Semiconductor
  • Marking Code: 2SB772
  • Material: Silicon
  • Type: PNP Power Transistor
  • Complement to: 2SD882

Technical Specifications

ParameterSymbolValueUnitTest Condition
Collector-Base Breakdown VoltageVCBO-40VIC=-100uA, IE=0
Collector-Emitter Breakdown VoltageVCEO-30VIC=-10mA, IB=0
Emitter-Base Breakdown VoltageVEBO-6VIE=-100uA, IC=0
Collector CurrentIC-3A
Collector Power DissipationPC1.25W
Junction TemperatureTJ150
Storage TemperatureTstg-55~150
Collector Cutoff CurrentICBO-1uAVCB=-40V, IE=0
Collector Cutoff CurrentICEO-10uAVCB=-30V, IB=0
Emitter Cutoff CurrentIEBO-1uAVEB=-5V, IC=0
DC Current GainHFE(1)60-400VCE=-2V, IC=-1A
DC Current GainHFE(2)30VCE=-2V, IC=-20mA
Collector-Emitter Saturation VoltageVCE(sat)-0.5VIC=-2A, IB=-200mA
Base-Emitter Saturation VoltageVBE(sat)-1.5VIC=-2A, IB=-200mA
Transition frequencyfT50MHzVCE=-5V, IC=-100mA, f=10MHz

2505271725_KTP-2SB772_C48997856.pdf

Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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