| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | - |
| type | NPN |
| Number | - |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 25V 500mA 300mW Surface Mount SOT-23 |
| Mfr. Part # | S8050 J3Y |
| Package | SOT-23 |
| Model Number | S8050 J3Y |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | - |
| type | NPN | Number | - |
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃@(Tj) | Description | Bipolar (BJT) Transistor NPN 25V 500mA 300mW Surface Mount SOT-23 |
| Mfr. Part # | S8050 J3Y | Package | SOT-23 |
| Model Number | S8050 J3Y |
The S8050 is an NPN transistor, complementary to the S8550. It is designed for general-purpose applications with a collector current capability of 0.5A. This transistor is supplied in a SOT-23 package.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40 V , IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCB=20V , I E=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, I C= 50mA | 120 | 400 | ||
| DC current gain | hFE(2) | VCE=1V, I C= 500mA | 50 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500 mA, IB= 50mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500 mA, IB= 50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=6V, I C= 20mA f=30MHz | 150 | MHz | ||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 500 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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