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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China JSMSEMI TIP127 JSM Silicon PNP Darlington Power Transistor with High Collector
China JSMSEMI TIP127 JSM Silicon PNP Darlington Power Transistor with High Collector

  1. China JSMSEMI TIP127 JSM Silicon PNP Darlington Power Transistor with High Collector

JSMSEMI TIP127 JSM Silicon PNP Darlington Power Transistor with High Collector

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Current - Collector Cutoff -
Pd - Power Dissipation 2W
DC Current Gain 1000
Transition frequency(fT) -
type PNP
Current - Collector(Ic) 5A
Collector - Emitter Voltage VCEO 100V
Operating Temperature -
Description 2W 1000 PNP 5A 100V TO-220-3 Single Bipolar Transistors RoHS
Mfr. Part # TIP127-JSM
Package TO-220-3
Model Number TIP127-JSM

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  1. Product Details
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Product Specification

Current - Collector Cutoff - Pd - Power Dissipation 2W
DC Current Gain 1000 Transition frequency(fT) -
type PNP Current - Collector(Ic) 5A
Collector - Emitter Voltage VCEO 100V Operating Temperature -
Description 2W 1000 PNP 5A 100V TO-220-3 Single Bipolar Transistors RoHS Mfr. Part # TIP127-JSM
Package TO-220-3 Model Number TIP127-JSM

Product Overview

The TIP125/126/127 are Silicon PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain, and low collector saturation voltage, making them a complementary type to the TIP120/121/122 series.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Material: Silicon

Technical Specifications

ParameterConditionsTIP125TIP126TIP127Unit
VCBO (Collector-base voltage)Open emitter-60-80-100V
VCEO (Collector-emitter voltage)Open base-60-80-100V
VEBO (Emitter-base voltage)Open collector-5V
IC (Collector current-DC)-5A
ICM (Collector current-Pulse)-8A
IB (Base current-DC)-120mA
PC (Collector power dissipation)TC=2565W
Ta=252W
Tj (Junction temperature)150
Tstg (Storage temperature)-65~150
VCEO(SUS) (Collector-emitter sustaining voltage)IC=-0.1A, IB=0-60-80-100V
VCEsat-1 (Collector-emitter saturation voltage)IC=-3A ,IB=-12mA-2.0V
VCEsat-2 (Collector-emitter saturation voltage)IC=-5A ,IB=-20mA-4.0V
VBE (Base-emitter on voltage)IC=-3.0A ; VCE=-3V-2.5V
ICBO (Collector cut-off current)TIP125 VCB=-60V, IE=0-0.2mA
TIP126 VCB=-80V, IE=0-0.2mA
TIP127 VCB=-100V, IE=0-0.2mA
ICEO (Collector cut-off current)TIP125 VCE=-30V, IB=0-0.5mA
TIP126 VCE=-40V, IB=0-0.5mA
TIP127 VCE=-50V, IB=0-0.5mA
IEBO (Emitter cut-off current)VEB=-5V; IC=0-2mA
hFE-1 (DC current gain)IC=-0.5A ; VCE=-3V1000
hFE-2 (DC current gain)IC=-3.0A ; VCE=-3V1000
Cob (Output capacitance)IE=0 ; VCB=-10V,f=0.1MHz300pF

2401051657_JSMSEMI-TIP127-JSM_C7498975.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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