Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 350mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 160V 600mA 100MHz Through Hole TO-92 |
| Mfr. Part # | 2N5551 |
| Package | TO-92 |
| Model Number | 2N5551 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 350mW | Transition frequency(fT) | 100MHz |
| type | NPN | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 160V 600mA 100MHz Through Hole TO-92 | Mfr. Part # | 2N5551 |
| Package | TO-92 | Model Number | 2N5551 |
The JSMICRO Semiconductor 2N5551 is an NPN General Purpose Transistor, ideal for medium power amplification and switching applications. It features an epitaxial planar die construction and is also available in a lead-free version. A complementary PNP type is also available.
| Parameter | Symbol | Test Conditions | Min. | Max. | Unit |
| Collector-base voltage | VCBO | @ Ta=25 | 180 | V | |
| Collector-emitter voltage | VCEO | @ Ta=25 | 160 | V | |
| Emitter-base voltage | VEBO | @ Ta=25 | 6 | V | |
| Collector current (DC) | IC | @ Ta=25 | 0.6 | A | |
| Collector dissipation | PC | @ Ta=25 | 0.35 | W | |
| Thermal resistance, Junction to ambient | RJA | @ Ta=25 | 357 | C/W | |
| Junction and storage temperature | Tj ,Tstg | @ Ta=25 | -55 | +150 | C |
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 180 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=0.1mA,IB=0 | 160 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 6 | V | |
| Collector cut-off current | ICBO | IE = 0; VCB = 120V | -50 | nA | |
| Emitter cut-off current | IEBO | IC = 0; VEB = 4V | -50 | nA | |
| DC current gain | hFE | VCE = 5V; IC= 1mA | 80 | 300 | |
| DC current gain | hFE | VCE = 5V;IC = 10mA | 100 | ||
| DC current gain | hFE | VCE = 5V;IC = 50mA | 30 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC = 10mA; IB=1mA | 0.15 | V | |
| Collector-emitter saturation voltage | VCE(sat) | IC = 50mA; IB = 5mA | 0.2 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=10mA; IB=1mA | 1 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=50mA; IB=5mA | 1 | V | |
| Transition frequency | fT | IC=10mA; VCB=10V; f=100MHz | 100 | 300 | MHz |
| Output capacitance | Cobo | IE=10mA; VCE =10V; f=1.0MHz | 6.0 | pF |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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