Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | 20nA |
| Pd - Power Dissipation | 1.2W |
| Transition frequency(fT) | 130MHz |
| type | NPN |
| Current - Collector(Ic) | 4A |
| Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 100V 4A 130MHz 1.2W Surface Mount SOT-23 |
| Mfr. Part # | ZXTN2020FTA |
| Package | SOT-23 |
| Model Number | ZXTN2020FTA |
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Product Specification
| Current - Collector Cutoff | 20nA | Pd - Power Dissipation | 1.2W |
| Transition frequency(fT) | 130MHz | type | NPN |
| Current - Collector(Ic) | 4A | Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 100V 4A 130MHz 1.2W Surface Mount SOT-23 |
| Mfr. Part # | ZXTN2020FTA | Package | SOT-23 |
| Model Number | ZXTN2020FTA |
The ZXTN2020F is a 100V, SOT23 packaged NPN medium power transistor. It features advanced process capability and package design for maximized power handling and performance in a compact size, making it ideal for space-constrained applications. Key advantages include higher power dissipation in a SOT23 package, high peak current capability, low saturation voltage, and a 160V forward blocking voltage. It is suitable for applications such as MOSFET and IGBT gate driving, motor drives, and relay, lamp, and solenoid drives.
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Collector-base breakdown voltage | V(BR)CBO | 160 | 200 | V | IC=100A | |
| Collector-emitter breakdown voltage | V(BR)CEV | 160 | 200 | V | IC =1A, -1V< VBE<+0.3V | |
| Collector-emitter breakdown voltage | V(BR)CEO | 100 | 115 | V | IC=10mA (a) | |
| Emitter-base breakdown voltage | V(BR)EBO | 7 | 8 | V | IE=100A | |
| Collector-emitter cut-off current | ICEV | <1 | 20 | nA | VCES=128V, VBE = -1V | |
| Collector-base cut-off current | ICBO | <1 | 20 | nA | VCB=128V | |
| Emitter-base cut-off current | IEBO | <1 | 10 | nA | VEB=6V | |
| Static forward current transfer ratio | HFE | 100 | 100 | IC=10mA, VCE=2V(a) | ||
| 35 | 220 | IC=1A, VCE=2V(a) | ||||
| 13 | 60 | IC=4A, VCE=2V(a) | ||||
| 300 | IC=10A, VCE=2V(a) | |||||
| Collector-emitter saturation voltage | VCE(sat) | 20 | 40 | mV | IC=0.1A, IB=5mA(a) | |
| 30 | 50 | mV | IC=1A, IB=100mA(a) | |||
| 105 | 150 | mV | IC=2A, IB=100mA(a) | |||
| mV | IC=4A, IB=400mA(a) | |||||
| Base-emitter saturation voltage | VBE(sat) | 0.94 | 1.05 | V | IC=4A, IB=400mA(a) | |
| Base-emitter turn-on voltage | VBE(on) | 0.84 | 0.94 | V | IC=4A, VCE=2V(a) | |
| Transition frequency | fT | 130 | MHz | Ic=100mA, VCE=10V, f=50MHz | ||
| Output capacitance | Cobo | 22 | pF | VCB=10V, f=1MHz | ||
| Turnon time | t(on) | 37 | ns | VCC=10V, IC=1A, IB1=IB2=100mA | ||
| Turn-off time | t(off) | 910 | ns | VCC=10V, IC=1A, IB1=IB2=100mA | ||
| Power dissipation @ TA=25C | PD | 1.0 | 8 | W | (a) Linear derating factor 9.6 mW/C | |
| 1.2 | 9.6 | W | (b) Linear derating factor 12.5 mW/C | |||
| 1.56 | 12.5 | W | (c) Linear derating factor | |||
| Junction to ambient thermal resistance | RJA | 125 | C/W | (a) | ||
| Junction to ambient thermal resistance | RJA | 104 | C/W | (b) | ||
| Junction to ambient thermal resistance | RJA | 80 | C/W | (c) | ||
| Operating and storage temperature | Tj:Tstg | -55 | +150 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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