| Emitter-Base Voltage(Vebo) | 7V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 625mW |
| Transition frequency(fT) | 165MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 2A |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 50V 2A 165MHz 625mW Surface Mount SOT-23 |
| Mfr. Part # | FMMT619TA |
| Package | SOT-23 |
| Model Number | FMMT619TA |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 7V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 625mW | Transition frequency(fT) | 165MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 2A | Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 50V 2A 165MHz 625mW Surface Mount SOT-23 |
| Mfr. Part # | FMMT619TA | Package | SOT-23 |
| Model Number | FMMT619TA |
The FMMT619 is a 50V NPN silicon low saturation transistor designed for various electronic applications. It offers a continuous collector current of 2A, low saturation voltage (VCE(sat) < 200mV @ 1A), and a low equivalent on-resistance (RCE(sat) = 68m). This device is suitable for MOSFET gate driving, DC-DC/DC-AC converters, regulators, LED drivers, and motor controls. It is available in a SOT23 package and is RoHS compliant and halogen-free.
| Characteristic | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 50 | V | |
| Collector-Emitter Voltage | VCEO | 50 | V | |
| Emitter-Base Voltage | VEBO | 7 | V | |
| Continuous Collector Current | IC | 2 | A | |
| Peak Pulse Current | ICM | 6 | A | |
| Base Current | IB | 500 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 625 | mW | @TA = +25C, mounted on 25mm x 25mm FR4 PCB |
| Power Dissipation (Note 6) | PD | 806 | mW | @TA = +25C, measured at t 5 sec |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 200 | C/W | |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 155 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 50 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage (Note 8) | BVCEO | 50 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Cut-off Current | ICBO | 100 | nA | VCB = 40V |
| Emitter Cut-off Current | IEBO | 100 | nA | VEB = 6V |
| Collector Emitter Cut-off Current | ICES | 100 | nA | VCES = 40V |
| Static Forward Current Transfer Ratio | hFE | 200-450 | IC = 10mA, VCE = 2V (Min Typ Max) | |
| Static Forward Current Transfer Ratio | hFE | 225-400 | IC = 200mA, VCE = 2V (Min Typ Max) | |
| Static Forward Current Transfer Ratio | hFE | 100-225 | IC = 1A, VCE = 2V (Min Typ Max) | |
| Static Forward Current Transfer Ratio | hFE | 40 | IC = 2A, VCE = 2V (Typ) | |
| Collector-Emitter Saturation Voltage | VCE(sat) | < 200 | mV | IC = 1A, IB = 10mA (Max) |
| Collector-Emitter Saturation Voltage | VCE(sat) | < 220 | mV | IC = 2A, IB = 50mA (Max) |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.87-1.0 | V | IC = 2A, IB = 50mA (Typ Max) |
| Base-Emitter Turn-On Voltage | VBE(on) | 0.82-1.0 | V | IC = 2A, VCE = 2V (Typ Max) |
| Transition Frequency | fT | 100-165 | MHz | IC = 50mA, VCE = 10V, f = 100MHz (Min Typ) |
| Collector Output Capacitance | Cobo | 12-20 | pF | VCB = 10V, f = 1MHz (Typ Max) |
| Turn-On Time | ton | 170 | ns | VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA (Typ) |
| Turn-Off Time | toff | 750 | ns | VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA (Typ) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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