| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 1.2W |
| Transition frequency(fT) | 110MHz |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 2A |
| Collector - Emitter Voltage VCEO | 32V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 32V 2A 110MHz 1.2W Surface Mount TO-252 |
| Mfr. Part # | 2DB1182Q-13 |
| Package | TO-252 |
| Model Number | 2DB1182Q-13 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 1.2W | Transition frequency(fT) | 110MHz |
| type | PNP | Number | 1 PNP |
| Current - Collector(Ic) | 2A | Collector - Emitter Voltage VCEO | 32V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 32V 2A 110MHz 1.2W Surface Mount TO-252 |
| Mfr. Part # | 2DB1182Q-13 | Package | TO-252 |
| Model Number | 2DB1182Q-13 |
The 2DB1182Q is a 32V PNP medium power transistor in a TO252 package. It features a high continuous collector current of -2A, a peak pulse current of -3A, and a low collector-emitter saturation voltage. This device is ideal for medium power switching or amplification applications. It is a totally lead-free, fully RoHS compliant, and halogen and antimony-free "Green" device, qualified to AEC-Q101 standards for high reliability.
| Characteristic | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -32 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Continuous Collector Current | IC | -2 | A | |
| Peak Pulse Collector Current | ICM | -3 | A | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 1.2 | W | @TA = +25C |
| Power Dissipation @TL = +25C (Note 6) | PD | 15 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 104 | C/W | |
| Thermal Resistance, Junction to Lead (Note 6) | RJL | 8.3 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings (Note 7) | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -40 | V | IC = -50A, IE = 0 |
| Collector-Emitter Breakdown Voltage | BVCEO | -32 | V | IC = -1mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -50A, IC = 0 |
| Collector Cutoff Current | ICBO | -1 | A | VCB = -20V, IE = 0 |
| Emitter Cutoff Current | IEBO | -1 | A | VEB = - 4V, IC = 0 |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.8 | V | IC = -2A, IB = -0.2A |
| DC Current Gain | hFE | 120 to 270 | VCE = -3V, IC = -0.5A | |
| Current Gain-Bandwidth Product | fT | 110 | MHz | VCE = -5V, IC = -0.1A, f = 30MHz |
| Output Capacitance | Cobo | 26 | pF | VCB = -10V, f = 1MHz |
| Turn-On Time | ton | 109 | ns | VCC = 30V, ICC = 150mA, IB1 = - IB2 = 15mA |
| Delay Time | td | 60 | ns | |
| Rise Time | tr | 49 | ns | |
| Turn-Off Time | toff | 280 | ns | |
| Storage Time | ts | 246 | ns | |
| Fall Time | tf | 34 | ns | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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