Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50uA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 300MHz |
| type | PNP |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 150V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 150V 200mA 300MHz 300mW Surface Mount SOT-26(SC74R) |
| Mfr. Part # | DMMT5401-7-F |
| Package | SOT-26(SC74R) |
| Model Number | DMMT5401-7-F |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50uA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 300MHz |
| type | PNP | Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 150V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 150V 200mA 300MHz 300mW Surface Mount SOT-26(SC74R) | Mfr. Part # | DMMT5401-7-F |
| Package | SOT-26(SC74R) | Model Number | DMMT5401-7-F |
The DMMT5401 is a 150V dual PNP small signal surface mount transistor designed for medium power amplification and switching applications. It offers 2% matched tolerance for hFE, VCE(SAT), and VBE(SAT), providing excellent performance consistency. Housed in a compact SOT26 (SC74R) package, it occupies half the footprint of two individual SOT23 transistors, making it ideal for space-constrained designs. This device features an epitaxial planar die construction and is manufactured using a "Green" molding compound, making it totally lead-free, fully RoHS compliant, and halogen and antimony free.
| Characteristic | Symbol | Value | Unit | Test Condition |
| Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -160 | V | |
| Collector-Emitter Voltage | VCEO | -150 | V | |
| Emitter-Base Voltage | VEBO | -5.0 | V | |
| Continuous Collector Current | IC | -200 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 300 | mW | (@TA = +25C, Note 5 & 6) |
| Thermal Resistance, Junction to Ambient | RJA | 417 | C/W | (Note 6) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -160 | V | IC = -100A, IE = 0 |
| Collector-Emitter Breakdown Voltage | BVCEO | -150 | V | IC = -1mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -10A, IC = 0 |
| Collector-Base Cutoff Current | ICBO | -50 | nA / A | VCB = -120V, IE = 0 (TA = +100C) |
| Emitter-Base Cutoff Current | IEBO | -50 | nA | VEB = -3V, IB = 0 |
| DC Current Gain | hFE | 50 - 240 | IC = -1mA, VCE = -5V; IC = -10mA, VCE = -5V; IC = -50mA, VCE = -5V (Note 8) | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.2 / -0.5 | V | IC = -10mA, IB = -1mA; IC = -50mA, IB = -5mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | -1 | V | IC = -10mA, IB = -1mA; IC = -50mA, IB = -5mA |
| Current Gain-Bandwidth Product | fT | 100 - 300 | MHz | VCE = -10V, IC = -10mA, f = 100MHz |
| Output Capacitance | COBO | 6 | pF | VCB = -10V, f = 1.0MHz, IE = 0mA |
| Small Signal Current Gain | hfe | 40 - 200 | VCE = -10V, IC = -1mA, f = 1.0kHz | |
| Noise Figure | NF | 8 | dB | VCE = -5V, IC = -200A, RS = 10, f = 1.0kHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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