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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China PNP Small Signal Transistor DIODES MMBT3906LP-7B 40V 200mA Molded Plastic X1
China PNP Small Signal Transistor DIODES MMBT3906LP-7B 40V 200mA Molded Plastic X1

  1. China PNP Small Signal Transistor DIODES MMBT3906LP-7B 40V 200mA Molded Plastic X1

PNP Small Signal Transistor DIODES MMBT3906LP-7B 40V 200mA Molded Plastic X1

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Emitter-Base Voltage(Vebo) 6V
Current - Collector Cutoff 50nA
Pd - Power Dissipation 1W
Transition frequency(fT) 300MHz
type PNP
Current - Collector(Ic) 200mA
Collector - Emitter Voltage VCEO 40V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 40V 200mA 300MHz 1000mW Surface Mount DFN-3(1x0.6)
Mfr. Part # MMBT3906LP-7B
Package DFN-3(1x0.6)
Model Number MMBT3906LP-7B

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  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 6V Current - Collector Cutoff 50nA
Pd - Power Dissipation 1W Transition frequency(fT) 300MHz
type PNP Current - Collector(Ic) 200mA
Collector - Emitter Voltage VCEO 40V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 40V 200mA 300MHz 1000mW Surface Mount DFN-3(1x0.6) Mfr. Part # MMBT3906LP-7B
Package DFN-3(1x0.6) Model Number MMBT3906LP-7B

MMBT3906LP PNP Small Signal Transistor

The MMBT3906LP is a 40V PNP small signal transistor designed for general-purpose applications. It offers a high collector current of -200mA and a power dissipation of 1000mW. Its compact X1-DFN1006-3 package boasts a 0.60mm2 footprint, significantly smaller than SOT23, and a low profile of 0.5mm, minimizing off-board height. This device is complementary to the DIODES MMBT3904LP NPN transistor. It is totally lead-free, fully RoHS compliant, and halogen and antimony free, making it a "Green" device. It is suitable for automotive applications requiring specific change control, with parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities.

Product Attributes

  • Brand: DIODES
  • Package: X1-DFN1006-3
  • Package Material: Molded Plastic, "Green" Molding Compound
  • UL Flammability Classification: 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals Finish: NiPdAu, Solderable per MIL-STD-202, Method 208
  • Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Absolute Maximum Ratings
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -6 V
Collector Current IC -200 mA
Peak Collector Current ICM -200 mA
Thermal Characteristics
Power Dissipation (Note 5) PD 400 (Note 6) 1000 mW @TA = +25C
Thermal Resistance, Junction to Ambient (Note 5) RJA 310 (Note 6) 120 C/W @TA = +25C
Thermal Resistance, Junction to Case (Note 5) RJC 60 C/W @TA = +25C
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
ESD Ratings
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V JEDEC Class 3A
Electrostatic Discharge - Machine Model ESD MM 200 V
Electrical Characteristics
Collector-Base Breakdown Voltage BVCBO -40 V IC = -100A
Collector-Emitter Breakdown Voltage (Note 8) BVCEO -40 V IC = -10.0mA
Emitter-Base Breakdown Voltage BVEBO -6 V IE = -100A
Collector Cutoff Current ICEX -50 nA VCE = -30V, VEB(off) = -3.0V
Collector Cutoff Current ICBO -50 nA VCB = -30V
Base Cutoff Current IBL -50 nA VCE = -30V, VEB(off) = -3.0V
DC Current Gain hFE 60 (IC = -100A, VCE = -1.0V)
80 (IC = -1.0mA, VCE = -1.0V)
100-300 (IC = -10mA, VCE = -1.0V)
60 (IC = -50mA, VCE = -1.0V)
30 (IC = -100mA, VCE = -1.0V)
Collector-Emitter Saturation Voltage VCE(sat) -0.25 (IC = -10mA, IB = -1.0mA)
-0.40 (IC = -50mA, IB = -5.0mA)
V
Base-Emitter Saturation Voltage VBE(sat) -0.65 to -0.85 (IC = -10mA, IB = -1.0mA)
-0.95 (IC = -50mA, IB = -5.0mA)
V
Output Capacitance Cobo 4.5 pF VCB = -5.0V, f = 1.0MHz
Input Capacitance Cibo 10 pF VEB = -0.5V, f = 1.0MHz
Input Impedance hie 2 to 12 k VCE = -10V, IC = -1.0mA, f = 1.0kHz
Voltage Feedback Ratio hre 0.1 to 10 x 10-4
Small Signal Current Gain hfe 100 to 400
Output Admittance hoe 3 to 60 S
Current Gain-Bandwidth Product fT 300 MHz VCE = -20V, IC = -10mA, f = 100MHz
Switching Characteristics
Delay Time td 35 ns VCC = -3.0V, IC = -10mA, IB1 = -IB2 = -1.0mA
Rise Time tr 35 ns
Storage Time ts 225 ns
Fall Time tf 75 ns

2412251151_DIODES-MMBT3906LP-7B_C780859.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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