Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 7V |
| Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 3W |
| Transition frequency(fT) | 130MHz |
| type | NPN |
| Current - Collector(Ic) | 6A |
| Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 60V 6A 130MHz 3W Surface Mount SOT-223 |
| Mfr. Part # | FZT851TA |
| Package | SOT-223 |
| Model Number | FZT851TA |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 7V | Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 3W | Transition frequency(fT) | 130MHz |
| type | NPN | Current - Collector(Ic) | 6A |
| Collector - Emitter Voltage VCEO | 60V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 60V 6A 130MHz 3W Surface Mount SOT-223 | Mfr. Part # | FZT851TA |
| Package | SOT-223 | Model Number | FZT851TA |
The FZT851 is a 60V NPN medium power transistor in a SOT223 package, designed for high continuous collector current (IC = 6A) and peak pulse current (ICM = 20A). It features low saturation voltage (VCE(sat) < 100mV @ 1A) and a low equivalent on-resistance (RCE(sat) = 44m). The transistor offers high gain hold-up with hFE specified up to 10A. It is available in lead-free, RoHS compliant, and "Green" (Halogen and Antimony free) versions. The FZT851Q variant is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, making it suitable for automotive applications.
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 150 | V | |
| Collector-Emitter Voltage | VCEO | 60 | V | |
| Emitter-Base Voltage | VEBO | 7 | V | |
| Continuous Collector Current | IC | 6 | A | @TA = +25C |
| Peak Pulse Current | ICM | 20 | A | @TA = +25C |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 3.0 | W | @TA = +25C (Note 5) |
| Linear Derating Factor | 24 | mW/C | (Note 5) | |
| Thermal Resistance, Junction to Ambient | RJA | 42 | C/W | (Note 5) |
| Thermal Resistance Junction to Lead | RJL | 8.8 | C/W | (Note 7) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 8,000 | V | JEDEC Class 3B |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 150 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | VCEO | 60 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Cut-Off Current | ICBO | <1 | nA | VCB = 120V |
| Collector Cut-Off Current | ICER | <1 | nA | VCE = 120V, RB 1k |
| Emitter Cut-Off Current | IEBO | <1 | nA | VEB = 6V |
| DC Current Gain | hFE | 100 - 200 | IC = 10mA, VCE = 1V | |
| DC Current Gain | hFE | 75 - 120 | IC = 5A, VCE = 1V | |
| DC Current Gain | hFE | 25 - 50 | IC = 10A, VCE = 1V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | <100 | mV | IC = 1A, IB = 50mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | <375 | mV | IC = 6A, IB = 300mA |
| Base-Emitter Saturation Voltage | VBE(sat) | <1,200 | mV | IC = 6A, IB = 300mA |
| Base-Emitter Turn-On Voltage | VBE(on) | <1,150 | mV | IC = 6A, VCE = 1V |
| Current Gain-Bandwidth Product | ft | 130 | MHz | IC = 100mA, VCE = 10V, f = 50MHz |
| Output Capacitance | Cobo | 45 | pF | VCB = 10V, f = 1MHz |
| Switching Times (Turn-on) | ton | 45 | ns | IC = 1A, VCC = 10V, IB1 = -IB2 = 100mA |
| Switching Times (Turn-off) | toff | 1,100 | ns | IC = 1A, VCC = 10V, IB1 = -IB2 = 100mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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