| Current - Collector Cutoff | 20nA |
| Pd - Power Dissipation | 3W |
| Transition frequency(fT) | 120MHz |
| type | PNP |
| Current - Collector(Ic) | 5.5A |
| Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 60V 5.5A 120MHz 3W Surface Mount SOT-223 |
| Mfr. Part # | ZX5T951GQTC |
| Package | SOT-223 |
| Model Number | ZX5T951GQTC |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 20nA | Pd - Power Dissipation | 3W |
| Transition frequency(fT) | 120MHz | type | PNP |
| Current - Collector(Ic) | 5.5A | Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 60V 5.5A 120MHz 3W Surface Mount SOT-223 |
| Mfr. Part # | ZX5T951GQTC | Package | SOT-223 |
| Model Number | ZX5T951GQTC |
The ZX5T951GQ is a 60V PNP medium power, low saturation bipolar junction transistor (BJT) designed to meet the stringent requirements of automotive applications. It offers high continuous collector current, peak pulse current, and low saturation voltage, making it suitable for various power switching and driving applications.
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Emitter Breakdown Voltage | BVCEO | -60 | V | IC = -10mA |
| High Continuous Collector Current | IC | -5.5 | A | |
| Peak Pulse Current | ICM | -15 | A | |
| Low Saturation Voltage | VCE(sat) | < -70 | mV | @ -1A |
| Low Equivalent On-Resistance | RSAT | 39 | m | |
| Static Forward Current Transfer Ratio | hFE | 100 - 250 | IC = -10mA, VCE = -1V | |
| 100 - 200 | IC = -2A, VCE = -1V | |||
| 45 - 90 | IC = -5A, VCE = -1V | |||
| 10 - 25 | IC = -10A, VCE = -1V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -15 to -25 | mV | IC = -100mA, IB = -10mA |
| -55 to -70 | mV | IC = -1A, IB = -100mA | ||
| -90 to -120 | mV | IC = -2A, IB = -200mA | ||
| -195 to -250 | mV | IC = -5A, IB = -500mA | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1030 to -1150 | mV | IC = -5A, IB = -500mV |
| Base-Emitter Turn-On Voltage | VBE(on) | -920 to -1020 | mV | IC = -5A, VCE = -1V |
| Output Capacitance | Cobo | 48 | pF | VCB = -10V, f = 1MHz |
| Transition Frequency | fT | 120 | MHz | VCE = -10V, IC = -100mA, f = 50MHz |
| Switching Time (Turn-on) | ton | 39 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -100mA |
| Switching Time (Turn-off) | toff | 370 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -100mA |
| Power Dissipation | PD | 3.0 | W | @ TA = +25C (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 42 | C/W | @ TA = +25C (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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