Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 250MHz |
| type | PNP |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 200mW Surface Mount SOT-323 |
| Mfr. Part # | MMBT3906W |
| Package | SOT-323 |
| Model Number | MMBT3906W |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 250MHz |
| type | PNP | Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V | Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 200mW Surface Mount SOT-323 | Mfr. Part # | MMBT3906W |
| Package | SOT-323 | Model Number | MMBT3906W |
The MMBT3906W is a PNP Silicon Epitaxial Planar Transistor designed for switching and amplifier applications.
| Parameter | Symbol | Value | Unit | Conditions |
| DC Current Gain | hFE | 80 | - | at -VCE = 1 V, -IC = 1 mA |
| 100 | - | at -VCE = 1 V, -IC = 10 mA | ||
| 60 | - | at -VCE = 1 V, -IC = 50 mA | ||
| 30 | - | at -VCE = 1 V, -IC = 100 mA | ||
| - | 300 | - | ||
| Collector Emitter Cutoff Current | ICES | - | 50 nA | at -VCE = 30 V |
| Emitter Base Cutoff Current | IEBO | - | 50 nA | at -VEB = 3 V |
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 | - V | at -IC = 10 A |
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 40 | - V | at -IC = 1 mA |
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 | - V | at -IE = 10 A |
| Collector Emitter Saturation Voltage | -VCE(sat) | - | 0.25 V | at -IC = 10 mA, -IB = 1 mA |
| - | 0.4 V | at -IC = 50 mA, -IB = 5 mA | ||
| Base Emitter Saturation Voltage | -VBE(sat) | 0.65 | - 0.85 V | at -IC = 10 mA, -IB = 1 mA |
| - | 0.95 V | at -IC = 50 mA, -IB = 5 mA | ||
| Transition Frequency | fT | 250 | - MHz | at -VCE = 20 V, IE = 10 mA, f = 100 MHz |
| Collector Output Capacitance | Cob | - | 4.5 pF | at -VCB = 10 V, f = 100 KHz |
| Delay Time | td | - | 35 ns | at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA |
| Rise Time | tr | - | 35 ns | at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA |
| Storage Time | tstg | - | 225 ns | at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA |
| Fall Time | tf | - | 75 ns | at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA |
| Parameter | Symbol | Value | Unit |
| Collector Base Voltage | -VCBO | 40 | V |
| Collector Emitter Voltage | -VCEO | 40 | V |
| Emitter Base Voltage | -VEBO | 5 | V |
| Collector Current | -IC | 200 | mA |
| Total Power Dissipation | Ptot | 200 | mW |
| Junction Temperature | Tj | 150 | OC |
| Storage Temperature Range | Tstg | -55 to +150 | OC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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