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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China npn plastic encapsulated transistor GOODWORK PBSS4350Z-GK ideal for driving leds
China npn plastic encapsulated transistor GOODWORK PBSS4350Z-GK ideal for driving leds

  1. China npn plastic encapsulated transistor GOODWORK PBSS4350Z-GK ideal for driving leds

npn plastic encapsulated transistor GOODWORK PBSS4350Z-GK ideal for driving leds

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Current - Collector Cutoff 100nA
Emitter-Base Voltage(Vebo) 6V
Pd - Power Dissipation 1.35W
Transition frequency(fT) 100MHz
type NPN
Current - Collector(Ic) 3A
Collector - Emitter Voltage VCEO 50V
Operating Temperature -55℃~+150℃@(Tj)
Description 1.35W NPN 3A 50V SOT-223 Single Bipolar Transistors RoHS
Mfr. Part # PBSS4350Z-GK
Package SOT-223
Model Number PBSS4350Z-GK

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  1. Product Details
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Product Specification

Current - Collector Cutoff 100nA Emitter-Base Voltage(Vebo) 6V
Pd - Power Dissipation 1.35W Transition frequency(fT) 100MHz
type NPN Current - Collector(Ic) 3A
Collector - Emitter Voltage VCEO 50V Operating Temperature -55℃~+150℃@(Tj)
Description 1.35W NPN 3A 50V SOT-223 Single Bipolar Transistors RoHS Mfr. Part # PBSS4350Z-GK
Package SOT-223 Model Number PBSS4350Z-GK

Product Overview

The PBSS4350Z is a plastic-encapsulated NPN transistor designed for power management and peripheral driver applications. It offers a low collector-emitter saturation voltage, high collector current capability, and high DC current gain at high collector currents, leading to increased efficiency and reduced heat generation. This transistor is a complement to the PBSS4350Z. Its applications include DC/DC converters, supply line switching, battery chargers, linear voltage regulation (LDO), and driving low-voltage loads like lamps, LEDs, relays, buzzers, and motors.

Product Attributes

  • Brand: PBSS4350Z
  • Type: NPN Plastic-Encapsulated Transistor

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Collector-Base Voltage (Breakdown) BVCBO IC = 100A, IE = 0 60 V
Collector-Emitter Voltage (Breakdown) BVCEO IC = 1mA, IB = 0 50 V
Emitter-Base Voltage (Breakdown) BVEBO IE = 100A, IC = 0 6 V
Collector Current (DC) IC 3 A
Peak Collector Current ICM 5 A
Collector Power Dissipation PC 1.35 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
Collector Cut-off Current ICBO VCB = 50V, IB = 0 100 nA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 100 nA
DC Current Gain (hFE) hFE VCE= 2V, IC= 500mA 200
VCE= 2V, IC= 1A 200
VCE= 2V, IC= 2A 100
Collector-Emitter Saturation Voltage (VCE(sat)) VCE(sat) IC = 500mA, IB = 50mA -90 mV
IC = 1A, IB = 50mA -170 mV
Collector-Emitter Saturation Voltage (VCE(sat)) VCE(sat) IC = 2A, IB = 200mA -290 mV
Equivalent On-Resistance (RCEsat) RCEsat IC = 2A, IB = 200mA 145 m
Base-Emitter Saturation Voltage (VBE(sat)) VBE(sat) IC = -2A, IB = -200mA -1.2 V
Base-Emitter Turn-on Voltage (VBE(on)) VBE(on) VCE= 2V, IC = 1A 1 V
Transition Frequency (fT) fT VCE = 5V, IC = 100mA 100 MHz
Collector Capacitance (CC) CC VCB = 10V, IE=0, f=1MHz 30 pF
Resistance Junction to Ambient (RJA) RJA Device mounted on PCB; single sided copper; tinplated; mounting pad for collector 1cm 92 /W
Resistance Junction to Ambient (RJA) RJA Device mounted on PCB; single sided copper; tinplated; mounting pad for collector 6cm 62.5 /W

2509151638_GOODWORK-PBSS4350Z-GK_C51912412.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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