| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 15nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 200MHz |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 45V 100mA 200MHz 200mW Surface Mount SOT-363 |
| Mfr. Part # | BC847BS |
| Package | SOT-363 |
| Model Number | BC847BS |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 15nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 200MHz |
| type | NPN | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V | Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 45V 100mA 200MHz 200mW Surface Mount SOT-363 | Mfr. Part # | BC847BS |
| Package | SOT-363 | Model Number | BC847BS |
This device is designed for general purpose amplifier applications. It is a dual transistor (NPN+NPN) housed in an SOT-363 package.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 45 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current-Continuous | IC | 100 | mA | |||
| Power Dissipation | PD | Ta=25 | 200 | mW | ||
| Thermal Resistance. Junction to Ambient | RJA | 625 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A,IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=30V,IE=0 | 15 | nA | ||
| Emitter cut-off current | IEBO | VEB =4V, IC=0 | 15 | nA | ||
| DC current gain* | hFE | VCE=5V,IC=2mA | 200 | 450 | ||
| Collector-emitter saturation voltage | VCE(sat)(1) | IC=10mA,IB=0.5mA | 0.25 | V | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | IC=100mA,IB=5mA | 0.65 | V | ||
| Base-emitter voltage | VBE(1) | VCE=5V,IC=2mA | 0.58 | 0.7 | V | |
| Base-emitter voltage | VBE(2) | VCE=5V,IC=10mA | 0.77 | V | ||
| Transition frequency | fT | VCE=5V,IC=20mA ,f=100MHz | 200 | MHz | ||
| Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 2 | pF |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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