Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50uA |
| Pd - Power Dissipation | 2.25W |
| Transition frequency(fT) | 130MHz |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 2.25W PowerDI-5 |
| Mfr. Part # | DXT5551P5-13 |
| Package | PowerDI-5 |
| Model Number | DXT5551P5-13 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50uA |
| Pd - Power Dissipation | 2.25W | Transition frequency(fT) | 130MHz |
| type | NPN | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 2.25W PowerDI-5 | Mfr. Part # | DXT5551P5-13 |
| Package | PowerDI-5 | Model Number | DXT5551P5-13 |
The DXT5551P5 is a 160V NPN high voltage transistor designed for high reliability applications. It offers significant size reduction compared to traditional packages like SOT223 and TO252, with a maximum height of just 1.1mm. This device is rated up to 2.25W and features a high collector-emitter breakdown voltage of 160V, making it suitable for demanding applications.
| Characteristic | Symbol | Value | Unit | Test Condition |
| Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 180 | V | |
| Collector-Emitter Voltage | VCEO | 160 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Continuous Collector Current | IC | 600 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 4) | PD | 2.25 | W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm) |
| Thermal Resistance, Junction to Ambient Air (Note 4) | RJA | 55.5 | C/W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm) |
| Power Dissipation (Note 5) | PD | 1.28 | W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm) |
| Thermal Resistance, Junction to Ambient Air (Note 5) | RJA | 97.4 | C/W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm) |
| Power Dissipation (Note 6) | PD | 0.7 | W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout) |
| Thermal Resistance, Junction to Ambient Air (Note 6) | RJA | 179 | C/W | TA = 25C (Device mounted on 1.6mm FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout) |
| Thermal Resistance, Junction to Collector Terminal | RJT | 30 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 180 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage (Note 7) | BVCEO | 160 | V | IC = 1mA |
| Emitter-Base Breakdown Voltage | BVEBO | 6.0 | V | IE = 10A |
| Collector Cutoff Current | ICBO | <1 | nA | VCB = 120V |
| Collector Cutoff Current | ICBO | 50 | A | VCB = 120V, TA = 100C |
| Collector-Emitter Saturation Voltage (Note 7) | VCE(sat) | 65 | mV | IC = 10mA, IB = 1mA |
| Collector-Emitter Saturation Voltage (Note 7) | VCE(sat) | 115 | mV | IC = 50mA, IB = 5mA |
| Collector-Emitter Saturation Voltage (Note 7) | VCE(sat) | 150 | mV | IC = 100mA, IB = 10mA |
| Collector-Emitter Saturation Voltage (Note 7) | VCE(sat) | 200 | mV | IC = 200mA, IB = 20mA |
| Base-Emitter Saturation Voltage (Note 7) | VBE(sat) | 760 | mV | IC = 10mA, IB = 1mA |
| Base-Emitter Saturation Voltage (Note 7) | VBE(sat) | 840 | mV | IC = 50mA, IB = 5mA |
| Base-Emitter Saturation Voltage (Note 7) | VBE(sat) | 1000 | mV | IC = 100mA, IB = 10mA |
| Base-Emitter Saturation Voltage (Note 7) | VBE(sat) | 1200 | mV | IC = 200mA, IB = 20mA |
| DC Current Gain (Note 7) | hFE | 80 | VCE = 5V, IC = 1mA | |
| DC Current Gain (Note 7) | hFE | 130 | VCE = 5V, IC = 10mA | |
| DC Current Gain (Note 7) | hFE | 250 | VCE = 5V, IC = 50mA | |
| Transition Frequency | fT | 130 | MHz | VCE = 10V, IC = 10mA, f = 100MHz |
| Output Capacitance (Note 7) | Cobo | 6 | pF | VCB = 10V, f = 1MHz |
| Delay Time | t(d) | 95 | ns | VCC = 510V, IC = 10mA, IB1 = IB2 = 1mA |
| Rise Time | t(r) | 64 | Ns | VCC = 510V, IC = 10mA, IB1 = IB2 = 1mA |
| Storage Time | t(s) | 1256 | ns | VCC = 510V, IC = 10mA, IB1 = IB2 = 1mA |
| Fall Time | t(f) | 140 | ns | VCC = 510V, IC = 10mA, IB1 = IB2 = 1mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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