Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 7V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 2.1W |
| Transition frequency(fT) | 130MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 5A |
| Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 60V 5A 130MHz 2.1W Surface Mount SOT-89 |
| Mfr. Part # | ZXTN2010ZTA |
| Package | SOT-89 |
| Model Number | ZXTN2010ZTA |
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Product Specification
| Emitter-Base Voltage(Vebo) | 7V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 2.1W | Transition frequency(fT) | 130MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 5A | Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 60V 5A 130MHz 2.1W Surface Mount SOT-89 |
| Mfr. Part # | ZXTN2010ZTA | Package | SOT-89 |
| Model Number | ZXTN2010ZTA |
The Diodes Incorporated ZXTN2010Z is a 60V NPN low saturation transistor in a SOT89 package, designed for high current applications. It features a high continuous current capability of 5A, a low equivalent on-resistance with RSAT of 30m, and a low saturation voltage of VCE(SAT) < 65mV @ IC = 1A. The transistor also offers specified hFE up to 10A for high current gain hold-up. It is a complementary PNP type to the ZXTP2012Z and is available as a totally lead-free, fully RoHS compliant, and halogen/antimony-free "Green" device. Applications include emergency lighting circuits, motor driving, backlight inverters, power switches, and gate-driving MOSFETs and IGBTs.
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 150 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | VCEO | 60 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | VEBO | 7 | V | IE = 100A |
| Base Current | IB | 2 | A | |
| Continuous Collector Current | IC | 5 | A | |
| Peak Pulse Current | ICM | 20 | A | |
| Power Dissipation (Note 5) | PD | 1.5 | W | |
| Power Dissipation (Note 6) | PD | 2.1 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 83 | C/W | |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 60 | C/W | |
| Thermal Resistance, Junction to Case (Note 5) | RJC | 5.3 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C |
| DC Current Transfer Ratio (hFE) | hFE | 100-200 | IC = 10mA, VCE = 1V | |
| DC Current Transfer Ratio (hFE) | hFE | 100-300 | IC = 2A, VCE = 1V | |
| DC Current Transfer Ratio (hFE) | hFE | 55-105 | IC = 5A, VCE = 1V | |
| DC Current Transfer Ratio (hFE) | hFE | 20-40 | IC = 10A, VCE = 1V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | < 65 | mV | IC = 1A, IB = 50mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 970-1100 | mV | IC = 6A, IB = 300mA |
| Base-Emitter Turn-on Voltage | VBE(on) | 910-1050 | mV | IC = 6A, VCE = 1V |
| Transitional Frequency | fT | 130 | MHz | IC = 100mA, VCE = 10V, f = 50MHz |
| Output Capacitance | COBO | 31 | pF | VCB = 10V, f = 1MHz |
| Switching Time (turn-on) | ton | 42 | ns | VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA |
| Switching Time (turn-off) | toff | 760 | ns | VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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