Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | 10uA |
| Pd - Power Dissipation | 1W |
| DC Current Gain | 2000 |
| Transition frequency(fT) | 150MHz |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 120V |
| Operating Temperature | -55℃~+200℃@(Tj) |
| Description | 1W 2000 NPN 1A 120V TO-92 Single Bipolar Transistors RoHS |
| Mfr. Part # | ZTX605 |
| Package | TO-92 |
| Model Number | ZTX605 |
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Product Specification
| Current - Collector Cutoff | 10uA | Pd - Power Dissipation | 1W |
| DC Current Gain | 2000 | Transition frequency(fT) | 150MHz |
| type | NPN | Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 120V | Operating Temperature | -55℃~+200℃@(Tj) |
| Description | 1W 2000 NPN 1A 120V TO-92 Single Bipolar Transistors RoHS | Mfr. Part # | ZTX605 |
| Package | TO-92 | Model Number | ZTX605 |
NPN Silicon Planar Medium Power Darlington Transistors designed for general purpose amplification and switching applications. These transistors offer high voltage capabilities, significant current handling, and excellent gain characteristics, making them suitable for a range of electronic circuits.
| Parameter | Symbol | ZTX604 Min. | ZTX604 Max. | ZTX605 Min. | ZTX605 Max. | Unit | Conditions |
| Collector-Base Breakdown Voltage | V(BR)CBO | 120 | 140 | V | IC=100A | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 100 | 120 | V | IC=10mA* | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 10 | 10 | V | IE=100A | ||
| Collector Cut-Off Current | ICBO | 0.01 | 0.01 | A | VCB=100V | ||
| Collector Cut-Off Current | ICBO | 10 | 10 | A | VCB=120V | ||
| Collector Cut-Off Current | ICBO | 0.01 | 0.01 | A | VCB=100V,Tamb=100C | ||
| Collector Cut-Off Current | ICBO | 10 | 10 | A | VCB=120V,Tamb=100C | ||
| Emitter Cut-Off Current | IEBO | 0.1 | 0.1 | A | VEB=8V | ||
| Collector-Emitter Cut-Off Current | ICES | 10 | 10 | A | VCES=100V | ||
| Collector-Emitter Cut-Off Current | ICES | 10 | A | VCES=120V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.0 | 1.5 | 1.0 | 1.5 | V | IC=250mA, IB=0.25mA* |
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=1A, IB=1mA* | ||||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.8 | 1.8 | V | IC=1A, IB=1mA* | ||
| Base-Emitter Turn-On Voltage | VBE(on) | 1.7 | 1.7 | V | IC=1A, VCE=5V* | ||
| Static Forward Current Transfer Ratio | hFE | 2K | 5K | 2K | 0.5K | IC=50mA, VCE=5V | |
| Static Forward Current Transfer Ratio | hFE | 100K | 100K | IC=500mA, VCE=5V* | |||
| Static Forward Current Transfer Ratio | hFE | 2K | IC=1A, VCE=5V* | ||||
| Static Forward Current Transfer Ratio | hFE | 0.5K | IC=2A, VCE=5V* | ||||
| Transition Frequency | fT | 150 | 150 | MHz | IC=100mA, VCE=10V, f=20MHz | ||
| Input Capacitance | Cibo | 90 | 90 | pF | VEB=500mV, f=1MHz | ||
| Output Capacitance | Cobo | 15 | 15 | pF | VCB=10V, f=1MHz | ||
| Switching Times | ton | 0.5 | 0.5 | s | IC=500mA, VCE=10V, IB1=IB2=0.5mA | ||
| Switching Times | toff | 1.6 | 1.6 | s | |||
| Power Dissipation | Ptot | 1 | 1 | W | at Tamb=25C | ||
| Power Dissipation Derating | 5.7 | 5.7 | mW/C | derate above 25C | |||
| Operating and Storage Temperature Range | Tj:Tstg | -55 | +200 | -55 | +200 | C | |
| Collector-Base Voltage | VCBO | 120 | 140 | V | |||
| Collector-Emitter Voltage | VCEO | 100 | 120 | V | |||
| Emitter-Base Voltage | VEBO | 10 | 10 | V | |||
| Peak Pulse Current | ICM | 4 | 4 | A | |||
| Continuous Collector Current | IC | 1 | 1 | A |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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