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Hefei Purple Horn E-Commerce Co., Ltd.

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China Low Saturation Voltage PNP Transistor DIODES ZXTP2012ZTA in SOT89 Package for
China Low Saturation Voltage PNP Transistor DIODES ZXTP2012ZTA in SOT89 Package for

  1. China Low Saturation Voltage PNP Transistor DIODES ZXTP2012ZTA in SOT89 Package for

Low Saturation Voltage PNP Transistor DIODES ZXTP2012ZTA in SOT89 Package for

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Emitter-Base Voltage(Vebo) 7V
Current - Collector Cutoff 20nA
Pd - Power Dissipation 1.5W
Transition frequency(fT) 120MHz
type PNP
Current - Collector(Ic) 4.3A
Collector - Emitter Voltage VCEO 60V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 60V 4.3A 120MHz 1.5W Surface Mount SOT-89
Mfr. Part # ZXTP2012ZTA
Package SOT-89
Model Number ZXTP2012ZTA

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 7V Current - Collector Cutoff 20nA
Pd - Power Dissipation 1.5W Transition frequency(fT) 120MHz
type PNP Current - Collector(Ic) 4.3A
Collector - Emitter Voltage VCEO 60V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 60V 4.3A 120MHz 1.5W Surface Mount SOT-89 Mfr. Part # ZXTP2012ZTA
Package SOT-89 Model Number ZXTP2012ZTA

Product Overview

The ZXTP2012Z is a 60V PNP low saturation transistor in a SOT89 package, offering high continuous current capability of up to -4.3A and a low equivalent on-resistance (RSAT = 32m). It features a low saturation voltage (VCE(sat) < -65mV @ IC = -1A) and specified hFE up to -10A for high current gain hold-up. This device is suitable for various applications including emergency lighting, motor driving, backlight inverters, power switches, and gate driving MOSFETs and IGBTs. It is a 'Green' device, totally lead-free, and fully RoHS compliant.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT89
  • Material: Molded Plastic, "Green" Molding Compound
  • Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
  • Complementary NPN Type: DIODES ZXTN2010Z
  • Automotive-Compliant Part Available: ZXTP2012ZQ

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Collector-Base VoltageVCBO-100V
Collector-Emitter VoltageVCEO-60V
Emitter-Base VoltageVEBO-7V
Base CurrentIB-2A
Continuous Collector CurrentIC-4.3A
Peak Pulse CurrentICM-15A
Power Dissipation (Note 5)PD1.8W
Power Dissipation (Note 6)PD1.5W
Power Dissipation (Note 7)PD2.1W
Thermal Resistance, Junction to Ambient (Note 5)RJA125C/W
Thermal Resistance, Junction to Ambient (Note 6)RJA83C/W
Thermal Resistance, Junction to Ambient (Note 7)RJA60C/W
Thermal Resistance, Junction to Case (Note 5)RJC21C/W
Thermal Resistance, Junction to Leads (Note 8)RJL3.23C/W
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C
Collector-Base Breakdown VoltageBVCBO-100VIC = -100A
Collector-Emitter Breakdown Voltage (Note 9)BVCER-100VIC = -1A, RB 1k
Collector-Emitter Breakdown Voltage (Note 9)BVCEO-60VIC = -10mA
Emitter-Base Breakdown VoltageBVEBO-7VIE = -100A
Collector Cutoff CurrentICBO-1nAVCB = -80V
Collector Cutoff CurrentICBO-500nAVCB = -80V, TA = +100C
Collector Cutoff CurrentICER-1nAVCB = -80V, R 1k
Collector Cutoff CurrentICER-500nAVCB = -80V, TA = +100C, R 1k
Emitter Cutoff CurrentIEBO-1nAVEB = -6V
DC Current Transfer Static Ratio (Note 9)hFE100IC = -10mA, VCE = -1V
DC Current Transfer Static Ratio (Note 9)hFE250IC = -2A, VCE = -1V
DC Current Transfer Static Ratio (Note 9)hFE90IC = -5A, VCE = -1V
DC Current Transfer Static Ratio (Note 9)hFE30IC = -10A, VCE = -1V
Collector-Emitter Saturation Voltage (Note 9)VCE(sat)-14mVIC = -100mA, IB = -10mA
Collector-Emitter Saturation Voltage (Note 9)VCE(sat)-65mVIC = -1A, IB = -100mA
Collector-Emitter Saturation Voltage (Note 9)VCE(sat)-110mVIC = -2A, IB = -200mA
Collector-Emitter Saturation Voltage (Note 9)VCE(sat)-215mVIC = -5A, IB = -500mA
Base-Emitter Saturation Voltage (Note 9)VBE(sat)-950mVIC = -5A, IB = -500mA
Base-Emitter Turn-on Voltage (Note 9)VBE(on)-840mVIC = -5A, VCE = -1V
Transitional Frequency (Note 9)fT120MHzIC = -100mA, VCE = -10V, f = 50MHz
Output CapacitanceCobo48pFVCB = -10V, f = 1MHz
Switching Timeton39nsVCC = -10V, IC = -1A, IB1 = -IB2 = -100mA
Switching Timetoff370nsVCC = -10V, IC = -1A, IB1 = -IB2 = -100mA

2412251000_DIODES-ZXTP2012ZTA_C122574.pdf

Company Details

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,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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