| Emitter-Base Voltage(Vebo) | 7V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 1.5W |
| Transition frequency(fT) | 190MHz |
| type | NPN |
| Current - Collector(Ic) | 4A |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 45V 4A 190MHz 1.5W Surface Mount SOT-23F |
| Mfr. Part # | ZXTN07045EFFTA |
| Package | SOT-23F |
| Model Number | ZXTN07045EFFTA |
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Product Specification
| Emitter-Base Voltage(Vebo) | 7V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 1.5W | Transition frequency(fT) | 190MHz |
| type | NPN | Current - Collector(Ic) | 4A |
| Collector - Emitter Voltage VCEO | 45V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 45V 4A 190MHz 1.5W Surface Mount SOT-23F | Mfr. Part # | ZXTN07045EFFTA |
| Package | SOT-23F | Model Number | ZXTN07045EFFTA |
The ZXTN07045EFF is a 45V NPN low saturation transistor designed for applications demanding high gain and very low saturation voltage. Its SOT23F package offers a lower profile and higher dissipation compared to standard SOT23, making it ideal for high power density applications. This device is AEC-Q101 qualified, lead-free, and halogen/antimony-free (Green Device).
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | 45 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage (Base Open) | BVCEO | 45 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Emitter-Collector Breakdown Voltage (Reverse Blocking) | BVECX | 6 | V | IE = 100A; RBC < 1k or -0.25V < VBC < 0.25V |
| Emitter-Collector Breakdown Voltage (Base Open) | BVECO | 6 | V | IE = 100A |
| Collector-Base Cut-Off Current | ICBO | <1 | nA | VCB = 35V |
| Collector-Base Cut-Off Current | ICBO | 20 | A | VCB = 35V, TA = +100C |
| Emitter-Base Cut-Off Current | IEBO | <1 | nA | VEB = 5.6V |
| Static Forward Current Transfer Ratio | hFE | 400 | IC = 1A, VCE = 2V | |
| Static Forward Current Transfer Ratio | hFE | 500 | IC = 100mA, VCE = 2V | |
| Static Forward Current Transfer Ratio | hFE | 250 | IC = 2A, VCE = 2V | |
| Static Forward Current Transfer Ratio | hFE | 70 | IC = 4A, VCE = 2V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 80 | mV | IC = 1A, IB = 100mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 45 | mV | IC = 0.1A, IB = 0.5mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 160 | mV | IC = 1A, IB = 5mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 200 | mV | IC = 2A, IB = 20mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 230 | mV | IC = 4A, IB = 200mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 1000 | mV | IC = 4A, IB = 200mA |
| Base-Emitter On Voltage | VBE(on) | 875 | mV | IC = 4A, VCE = 2V |
| Transition Frequency | fT | 150 | MHz | IC = 50mA, VCE = 5V, f = 50MHz |
| Input Capacitance | Cibo | 225 | pF | VEB = 0.5V, f = 1MHz |
| Output Capacitance | Cobo | 18.4 | pF | VCB = 10V, f = 1MHz |
| Delay Time | td | 22.3 | ns | VCC = 10V, IC = 500mA, IB1 = IB2 = 50mA |
| Rise Time | tr | 10.6 | ns | VCC = 10V, IC = 500mA, IB1 = IB2 = 50mA |
| Storage Time | ts | 613 | ns | VCC = 10V, IC = 500mA, IB1 = IB2 = 50mA |
| Fall Time | tf | 146 | ns | VCC = 10V, IC = 500mA, IB1 = IB2 = 50mA |
| Continuous Collector Current | IC | 4 | A | @TA = +25C |
| Peak Pulse Current | ICM | 6 | A | @TA = +25C |
| Base Current | IB | 1 | A | @TA = +25C |
| Power Dissipation | PD | 1.50 | W | (Note 7) @TA = +25C |
| Thermal Resistance, Junction to Ambient | RJA | 83 | C/W | (Note 7) @TA = +25C |
| Thermal Resistance, Junction to Lead | RJL | 43.77 | C/W | (Note 9) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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