| Emitter-Base Voltage(Vebo) | 7V |
| Current - Collector Cutoff | 1nA |
| Pd - Power Dissipation | 1.25W |
| Transition frequency(fT) | 270MHz |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 40V 3A 270MHz 1.25W Surface Mount SOT-23 |
| Mfr. Part # | ZXTP25040DFHTA |
| Package | SOT-23 |
| Model Number | ZXTP25040DFHTA |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 7V | Current - Collector Cutoff | 1nA |
| Pd - Power Dissipation | 1.25W | Transition frequency(fT) | 270MHz |
| type | PNP | Number | 1 PNP |
| Current - Collector(Ic) | 3A | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 40V 3A 270MHz 1.25W Surface Mount SOT-23 |
| Mfr. Part # | ZXTP25040DFHTA | Package | SOT-23 |
| Model Number | ZXTP25040DFHTA |
The ZXTP25040DFH is a 40V PNP medium power transistor in a SOT23 package. It offers high power dissipation, high peak current, and low saturation voltage, making it suitable for applications such as MOSFET and IGBT gate driving, DC-DC converters, motor drives, and high-side drivers. This device is complementary to the ZXTN25040DFH and is available in a totally lead-free and fully RoHS compliant package.
| Characteristic | Symbol | Value | Unit | Test Condition |
| Features | ||||
| Breakdown Voltage Collector-Emitter (Forward Blocking) | BVCEO | -40 | V | |
| Breakdown Voltage Emitter-Collector (Reverse Blocking) | BVECO | -3 | V | |
| Continuous Collector Current | IC | -3 | A | |
| Collector-Emitter Saturation Voltage | VCE(sat) | < -85 | mV | @ -1A |
| Collector-Emitter Saturation Resistance | RCE(sat) | 55 | m | typical |
| Power Dissipation | PD | 1.25 | W | |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -45 | V | @ TA = +25C |
| Collector-Emitter Voltage (Forward Blocking) | VCEO | -40 | V | @ TA = +25C |
| Emitter-collector voltage (Reverse Blocking) | VECO | -3 | V | @ TA = +25C |
| Emitter-Base Voltage | VEBO | -7 | V | @ TA = +25C |
| Continuous Collector Current | IC | -3 | A | @ TA = +25C |
| Peak Pulse Current | ICM | -9 | A | @ TA = +25C |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 1.25 | W | @ TA = +25C (Note 9) |
| Thermal Resistance, Junction to Ambient | RJA | 69 | C/W | (Note 9) |
| Thermal Resistance, Junction to Lead | RJL | 74.95 | C/W | (Note 10) |
| Thermal Resistance, Junction to Case | RJC | 45 | C/W | (Note 11) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -45 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCEO | -40 | V | IC = -10mA |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Emitter-Collector Breakdown Voltage | BVECO | -3 | V | IE = -100A |
| Collector-Base Cutoff Current | ICBO | < -1 | nA | VCB = -45V |
| Collector-Base Cutoff Current | ICBO | -0.5 | A | VCB = -45V, Tamb = +100C |
| Emitter-Base Cutoff Current | IEBO | < -1 | nA | VEB = -5.6V |
| Static Forward Current Transfer Ratio | hFE | 300 | - | IC = -10mA, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 200 | - | IC = -1A, VCE = -2V |
| Static Forward Current Transfer Ratio | hFE | 30 | - | IC = -3A, VCE = -2V |
| Collector-Emitter Saturation Voltage | VCE(sat) | -170 | mV | IC = -1A, IB = -20mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -65 | mV | IC = -1A, IB = -100mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | -165 | mV | IC = -3A, IB = -300mA |
| Base-Emitter Saturation Voltage | VBE(sat) | -930 | mV | IC = -3A, IB = -300mA |
| Base-Emitter Voltage | VBE(on) | -830 | mV | IC = -3A, VCE = -2V |
| Output Capacitance | Cobo | 17.4 | pF | VCB = -10V, f = 1MHz |
| Transition Frequency | fT | 270 | MHz | VCE = -10V, IC = -50mA, f = 100MHz |
| Turn-on Time | t(on) | 75.5 | ns | VCC = -15V, IC = -750mA, IB1 = -IB2 = -15mA |
| Turn-off Time | t(off) | 320 | ns | VCC = -15V, IC = -750mA, IB1 = -IB2 = -15mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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