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Hefei Purple Horn E-Commerce Co., Ltd.

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China 40V PNP medium power transistor DIODES ZXTP25040DFHTA in compact SOT23 package
China 40V PNP medium power transistor DIODES ZXTP25040DFHTA in compact SOT23 package

  1. China 40V PNP medium power transistor DIODES ZXTP25040DFHTA in compact SOT23 package

40V PNP medium power transistor DIODES ZXTP25040DFHTA in compact SOT23 package

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Emitter-Base Voltage(Vebo) 7V
Current - Collector Cutoff 1nA
Pd - Power Dissipation 1.25W
Transition frequency(fT) 270MHz
type PNP
Number 1 PNP
Current - Collector(Ic) 3A
Collector - Emitter Voltage VCEO 40V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 40V 3A 270MHz 1.25W Surface Mount SOT-23
Mfr. Part # ZXTP25040DFHTA
Package SOT-23
Model Number ZXTP25040DFHTA

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 7V Current - Collector Cutoff 1nA
Pd - Power Dissipation 1.25W Transition frequency(fT) 270MHz
type PNP Number 1 PNP
Current - Collector(Ic) 3A Collector - Emitter Voltage VCEO 40V
Operating Temperature -55℃~+150℃ Description Bipolar (BJT) Transistor PNP 40V 3A 270MHz 1.25W Surface Mount SOT-23
Mfr. Part # ZXTP25040DFHTA Package SOT-23
Model Number ZXTP25040DFHTA

Product Overview

The ZXTP25040DFH is a 40V PNP medium power transistor in a SOT23 package. It offers high power dissipation, high peak current, and low saturation voltage, making it suitable for applications such as MOSFET and IGBT gate driving, DC-DC converters, motor drives, and high-side drivers. This device is complementary to the ZXTN25040DFH and is available in a totally lead-free and fully RoHS compliant package.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT23
  • Material: Molded Plastic, Green Molding Compound
  • Color: "Green" Device
  • Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free, Qualified to JEDEC standards

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Features
Breakdown Voltage Collector-Emitter (Forward Blocking)BVCEO-40V
Breakdown Voltage Emitter-Collector (Reverse Blocking)BVECO-3V
Continuous Collector CurrentIC-3A
Collector-Emitter Saturation VoltageVCE(sat)< -85mV@ -1A
Collector-Emitter Saturation ResistanceRCE(sat)55mtypical
Power DissipationPD1.25W
Absolute Maximum Ratings
Collector-Base VoltageVCBO-45V@ TA = +25C
Collector-Emitter Voltage (Forward Blocking)VCEO-40V@ TA = +25C
Emitter-collector voltage (Reverse Blocking)VECO-3V@ TA = +25C
Emitter-Base VoltageVEBO-7V@ TA = +25C
Continuous Collector CurrentIC-3A@ TA = +25C
Peak Pulse CurrentICM-9A@ TA = +25C
Thermal Characteristics
Power DissipationPD1.25W@ TA = +25C (Note 9)
Thermal Resistance, Junction to AmbientRJA69C/W(Note 9)
Thermal Resistance, Junction to LeadRJL74.95C/W(Note 10)
Thermal Resistance, Junction to CaseRJC45C/W(Note 11)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C
ESD Ratings
Electrostatic Discharge - Human Body ModelESD HBM4,000VJEDEC Class 3A
Electrostatic Discharge - Machine ModelESD MM400VJEDEC Class C
Electrical Characteristics
Collector-Base Breakdown VoltageBVCBO-45VIC = -100A
Collector-Emitter Breakdown VoltageBVCEO-40VIC = -10mA
Emitter-Base Breakdown VoltageBVEBO-7VIE = -100A
Emitter-Collector Breakdown VoltageBVECO-3VIE = -100A
Collector-Base Cutoff CurrentICBO< -1nAVCB = -45V
Collector-Base Cutoff CurrentICBO-0.5AVCB = -45V, Tamb = +100C
Emitter-Base Cutoff CurrentIEBO< -1nAVEB = -5.6V
Static Forward Current Transfer RatiohFE300-IC = -10mA, VCE = -2V
Static Forward Current Transfer RatiohFE200-IC = -1A, VCE = -2V
Static Forward Current Transfer RatiohFE30-IC = -3A, VCE = -2V
Collector-Emitter Saturation VoltageVCE(sat)-170mVIC = -1A, IB = -20mA
Collector-Emitter Saturation VoltageVCE(sat)-65mVIC = -1A, IB = -100mA
Collector-Emitter Saturation VoltageVCE(sat)-165mVIC = -3A, IB = -300mA
Base-Emitter Saturation VoltageVBE(sat)-930mVIC = -3A, IB = -300mA
Base-Emitter VoltageVBE(on)-830mVIC = -3A, VCE = -2V
Output CapacitanceCobo17.4pFVCB = -10V, f = 1MHz
Transition FrequencyfT270MHzVCE = -10V, IC = -50mA, f = 100MHz
Turn-on Timet(on)75.5nsVCC = -15V, IC = -750mA, IB1 = -IB2 = -15mA
Turn-off Timet(off)320nsVCC = -15V, IC = -750mA, IB1 = -IB2 = -15mA

2412251027_DIODES-ZXTP25040DFHTA_C211430.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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