| Emitter-Base Voltage(Vebo) | 4V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 350mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 350mW Surface Mount SOT-23 |
| Mfr. Part # | MMBTA06-7-F |
| Package | SOT-23 |
| Model Number | MMBTA06-7-F |
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Product Specification
| Emitter-Base Voltage(Vebo) | 4V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 350mW | Transition frequency(fT) | 100MHz |
| type | NPN | Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 80V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 350mW Surface Mount SOT-23 | Mfr. Part # | MMBTA06-7-F |
| Package | SOT-23 | Model Number | MMBTA06-7-F |
The MMBTA05 / MMBTA06 are NPN medium power transistors in a SOT23 package. They are ideal for low power amplification and switching applications. These devices feature epitaxial planar die construction and are complementary to PNP types MMBTA55 and MMBTA56. They are also available in AEC-Q101 qualified versions (MMBTA05Q/MMBTA06Q) suitable for automotive applications.
| Characteristic | Symbol | MMBTA05 | MMBTA06 | Unit | Test Condition | |
| Absolute Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | 60 | 80 | V | ||
| Collector-Emitter Voltage | VCEO | 60 | 80 | V | ||
| Emitter-Base Voltage | VEBO | 4.0 | V | |||
| Collector Current | IC | 500 | mA | |||
| Peak Collector Current | ICM | 1 | A | |||
| Thermal Characteristics | ||||||
| Power Dissipation | PD | 310 (Note 5) / 350 (Note 6) | mW | @TA = +25C, unless otherwise specified. | ||
| Thermal Resistance, Junction to Ambient | RJA | 403 (Note 5) / 357 (Note 6) | C/W | @TA = +25C, unless otherwise specified. | ||
| Thermal Resistance, Junction to Leads | RJL | 350 | C/W | @TA = +25C, unless otherwise specified. | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |||
| Electrical Characteristics | ||||||
| Collector-Base Breakdown Voltage | BVCBO | 60 | 80 | V | IC = 100A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | BVCEO | 60 | 80 | V | IC = 10.0mA, IB = 0 | |
| Emitter-Base Breakdown Voltage | BVEBO | 4.0 | V | IE = 100 A, IC = 0 | ||
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 60V, IE = 0 (MMBTA05) / VCB = 80V, IE = 0 (MMBTA06) | ||
| Collector Cutoff Current | ICES | 100 | nA | VCE = 60V, IBO = 0V (MMBTA05) / VCE = 80V, IBO = 0V (MMBTA06) | ||
| DC Current Gain | hFE | 100 | IC = 10mA, VCE = 1.0V / IC = 100mA, VCE = 1.0V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC = 100mA, IB = 10mA | ||
| Base-Emitter Turn-On Voltage | VBE(on) | 1.2 | V | IC = 100mA, VCE = 1.0V | ||
| Current Gain-Bandwidth Product | fT | 100 | MHz | VCE = 2.0V, IC = 10mA, f = 100MHz | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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