| Current - Collector Cutoff | 5uA |
| Transition frequency(fT) | 5MHz |
| Vce Saturation(VCE(sat)) | 500mV@0.5A,0.2A |
| Pd - Power Dissipation | 1.25W |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 480V |
| Description | 1.25W 1A 480V TO-252 Single Bipolar Transistors RoHS |
| Mfr. Part # | SL13003D |
| Package | TO-252 |
| Model Number | SL13003D |
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Product Specification
| Current - Collector Cutoff | 5uA | Transition frequency(fT) | 5MHz |
| Vce Saturation(VCE(sat)) | 500mV@0.5A,0.2A | Pd - Power Dissipation | 1.25W |
| Current - Collector(Ic) | 1A | Collector - Emitter Voltage VCEO | 480V |
| Description | 1.25W 1A 480V TO-252 Single Bipolar Transistors RoHS | Mfr. Part # | SL13003D |
| Package | TO-252 | Model Number | SL13003D |
The SL13003D is a high-performance transistor designed for a wide range of power switching applications. It is particularly well-suited for use in electronic ballasts, energy-saving lamps, chargers, LED power supplies, and various power switching circuits. Key features include high voltage resistance, fast switching speed, a large safe operating area, excellent output characteristics, and high current capacity, with an integrated damping diode. Its TO-252 package makes it convenient for surface-mount applications.
| Parameter Name | Symbol | Test Condition | Rating | Unit | Min | Max |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tamb= 25) | ||||||
| Collector-Emitter Breakdown Voltage | BVceo | 480 | V | |||
| Collector-Base Breakdown Voltage | BVcbo | 700 | V | |||
| Emitter-Base Breakdown Voltage | BVebo | 9 | V | |||
| Maximum DC Collector Current | Icm | 1.0 | A | |||
| Power Dissipation (Tamb=25) | Ptot | 1.25 | W | |||
| Maximum Operating Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55~150 | ||||
| Electrical Characteristics (Tamb= 25) | ||||||
| Collector-Emitter Breakdown Voltage | BVceo | IC=1mA, IB=0 | 480 | V | ||
| Collector-Base Breakdown Voltage | BVcbo | Ic=1mA, IE=0 | 700 | V | ||
| Emitter-Base Breakdown Voltage | BVebo | IE=1mA, IC=0 | 9 | V | ||
| Collector-Emitter Reverse Leakage Current | Iceo | Vce=410V, IB=0 | 5 | uA | ||
| Collector-Base Reverse Leakage Current | Icbo | Vcb=680V, IE=0 | 5 | uA | ||
| Emitter-Base Reverse Leakage Current | Iebo | Veb=7V, Ic=0 | 5 | uA | ||
| Common Emitter DC Current Gain | Hfe | Vce=5V, Ic=0.2A | 15 | 35 | ||
| Common Emitter DC Current Gain | Hfe | Vce=5V, Ic=1mA | 15 | |||
| Collector-Emitter Saturation Voltage | Vcesat | Ic=0.5A, Ib=0.2A | 0.5 | V | ||
| Storage Time | Ts | Ic=250mA | 1.5 | 3.5 | uS | |
| Characteristic Frequency | fT | Vce=10V, Ic=0.1A, f=1MHz | 5 | MHZ | ||
| Freewheeling Diode Forward Voltage Drop | VFEC | IC:0.5A | 1.8 | V | ||
| Package Dimensions (All Dimensions are in mm) | ||
|---|---|---|
| Dimension | MIN | MAX |
| A | 2.2 | 2.4 |
| B | 1.4 | 1.7 |
| B1 | 0.58 | 0.7 |
| B2 | 0.75 | 0.85 |
| B3 | 0.46 | 0.58 |
| C | 0.48 | 0.52 |
| D | 6.3 | 6.6 |
| D1 | 5.25 | 5.5 |
| E | 5.35 | 5.5 |
| E1 | 2.25 | 2.35 |
| E2 | 4.5 | 4.7 |
| L1 | 9.5 | 10 |
| L2 | 1.2 | 1.6 |
| L3 | 0.6 | 0.8 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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