| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 100@10mA,10V |
| Transition frequency(fT) | 300MHz |
| Number | 1 NPN |
| Vce Saturation(VCE(sat)) | 300mV@50mA,5mA |
| type | NPN |
| Pd - Power Dissipation | 150mW |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 150mW Surface Mount SOT-523 |
| Mfr. Part # | SL3904T |
| Package | SOT-523 |
| Model Number | SL3904T |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 100@10mA,10V | Transition frequency(fT) | 300MHz |
| Number | 1 NPN | Vce Saturation(VCE(sat)) | 300mV@50mA,5mA |
| type | NPN | Pd - Power Dissipation | 150mW |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 150mW Surface Mount SOT-523 |
| Mfr. Part # | SL3904T | Package | SOT-523 |
| Model Number | SL3904T |
The SL3904T is an NPN Switching Transistor designed for general-purpose applications. Its small package size makes it suitable for space-constrained designs. This transistor is complementary to other components in its series, offering flexibility in circuit design. It is characterized by its electrical parameters such as breakdown voltages, cut-off currents, DC current gain (hFE), saturation voltages, and switching times, all detailed under specific test conditions.
| Parameter | Symbol | Test Conditions | Rating | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Collector - Base Voltage | VCBO | Ta = 25 | 60 | V |
| Collector - Emitter Voltage | VCEO | Ta = 25 | 40 | V |
| Emitter - Base Voltage | VEBO | Ta = 25 | 6 | V |
| Collector Current - Continuous | IC | Ta = 25 | 200 | mA |
| Collector Power Dissipation | PC | Ta = 25 | 150 | mW |
| Thermal Resistance, Junction to Ambient | RJA | Ta = 25 | 833 | C/W |
| Junction Temperature | TJ | Ta = 25 | 150 | C |
| Storage Temperature Range | Tstg | Ta = 25 | -55 to 150 | C |
| Electrical Characteristics | ||||
| Collector-base breakdown voltage | VCBO | Ic= 100 A IE= 0 | 60 | V |
| Collector-emitter breakdown voltage | VCEO | Ic= 1 mA IB= 0 | 40 | V |
| Emitter-base breakdown voltage | VEBO | IE= 100A IC= 0 | 6 | V |
| Collector-base cut-off current | ICBO | VCB= 60 V , IE= 0 | 100 | nA |
| Collector cut-off current | ICEX | VCE= 30 V , VEB(off)=3V | 50 | nA |
| Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 100 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC=10 mA, IB=1mA | 0.2 | V |
| IC= 50 mA, IB= 5mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=10 mA, IB=1mA | 0.65 - 0.85 | V |
| IC= 50 mA, IB= 5mA | 0.95 | V | ||
| DC current gain | hFE | VCE= 10V, IC= 0.1mA | 40 | - |
| VCE= 10V, IC= 1mA | 70 | - | ||
| VCE= 10V, IC= 10mA | 100 - 300 | - | ||
| VCE= 10V, IC= 50mA | 60 | - | ||
| Switching times | td, tr, ts, tf | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA | td: 35, tr: 35, ts: 200, tf: 50 | nS |
| VCC=3V, IC=10mA, IB1=IB2=1mA | (See typical characteristics) | nS | ||
| Collector output capacitance | Cob | VCB= 5V, IE= 0, f=1MHz | 4 | pF |
| Base input capacitance | Cib | VEB=0.5V, IC=0, f=1MHz | 8 | pF |
| Transition frequency | fT | VCE= 20V, IC= 10mA, f=100MHz | 300 | MHz |
| Outline Dimensions | ||||
| Package | SOT-523 | |||
| Dimensions (mm) | A:1.8, A1:0.1, B:1.4, C:0.95, D:0.7, E:0.5, e:0.95, e1:0.45, HE:1.75, Lp:1.45, Q:0.60, w:0.2, bp:0.30, c:0.15, v:0.13, M:0.15 | mm | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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