Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| DC Current Gain | 100@10mA,1V |
| Transition frequency(fT) | 300MHz |
| Number | 1 NPN |
| type | NPN |
| Vce Saturation(VCE(sat)) | 300mV |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-323 |
| Mfr. Part # | MMBT3904W |
| Package | SOT-323 |
| Model Number | MMBT3904W |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| DC Current Gain | 100@10mA,1V | Transition frequency(fT) | 300MHz |
| Number | 1 NPN | type | NPN |
| Vce Saturation(VCE(sat)) | 300mV | Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-323 |
| Mfr. Part # | MMBT3904W | Package | SOT-323 |
| Model Number | MMBT3904W |
The MMBT3904W is an NPN Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. It offers a range of DC current gain values, breakdown voltages, and saturation voltages suitable for various electronic circuits.
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||
| Collector Base Voltage | VCBO | 60 | V | |
| Collector Emitter Voltage | VCEO | 40 | V | |
| Emitter Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 200 | mA | |
| Total Power Dissipation | Ptot | 200 | mW | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -55 to +150 | C | |
| Characteristics (Ta = 25 C) | ||||
| DC Current Gain | hFE | 40 | - | VCE = 1 V, IC = 0.1 mA |
| 70 | 300 | VCE = 1 V, IC = 1 mA | ||
| 100 | - | VCE = 1 V, IC = 10 mA | ||
| 60 | - | VCE = 1 V, IC = 50 mA | ||
| 30 | - | VCE = 1 V, IC = 100 mA | ||
| Collector Emitter Cutoff Current | ICES | - | 50 nA | VCE = 30 V |
| Emitter Base Cutoff Current | IEBO | - | 50 nA | VEB = 3 V |
| Collector Base Breakdown Voltage | V(BR)CBO | 60 | V | IC = 10 A |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IC = 1 mA |
| Emitter Base Breakdown Voltage | V(BR)EBO | 6 | V | IE = 10 A |
| Collector Emitter Saturation Voltage | VCE(sat) | - | 0.2 V | IC = 10 mA, IB = 1 mA |
| - | 0.3 V | IC = 50 mA, IB = 5 mA | ||
| Base Emitter Saturation Voltage | VBE(sat) | 0.65 | 0.85 V | IC = 10 mA, IB = 1 mA |
| - | 0.95 V | IC = 50 mA, IB = 5 mA | ||
| Transition Frequency | fT | 300 | MHz | VCE = 20 V, -IE = 10 mA, f = 100 MHz |
| Collector Output Capacitance | Cob | - | 4 pF | VCB = 10 V, f = 100 KHz |
| Delay Time | td | - | 35 ns | VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA |
| Rise Time | tr | - | 35 ns | VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA |
| Storage Time | tstg | - | 200 ns | VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA |
| Fall Time | tf | - | 50 ns | VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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