Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50nA |
| DC Current Gain | 240@10mA,5V |
| Transition frequency(fT) | 300MHz |
| Vce Saturation(VCE(sat)) | 500mV@50mA,5mA |
| type | PNP |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 150V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 150V 600mA 200mW Surface Mount SOT-363 |
| Mfr. Part # | MMDT5401 |
| Package | SOT-363 |
| Model Number | MMDT5401 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50nA |
| DC Current Gain | 240@10mA,5V | Transition frequency(fT) | 300MHz |
| Vce Saturation(VCE(sat)) | 500mV@50mA,5mA | type | PNP |
| Pd - Power Dissipation | 200mW | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 150V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 150V 600mA 200mW Surface Mount SOT-363 | Mfr. Part # | MMDT5401 |
| Package | SOT-363 | Model Number | MMDT5401 |
The MMDT5401 is a PNP Silicon Epitaxial Planar Transistor designed for high voltage amplifier applications. It offers specific DC current gain characteristics and breakdown voltage ratings, making it suitable for various electronic circuits requiring amplification in high voltage environments.
| Absolute Maximum Ratings (Ta = 25) | Symbol | Value | Unit | |
|---|---|---|---|---|
| Collector Base Voltage | -VCBO | 160 | V | |
| Collector Emitter Voltage | -VCEO | 150 | V | |
| Emitter Base Voltage | -VEBO | 5 | V | |
| Collector Current Continuous | -IC | 600 | mA | |
| Power Dissipation | Ptot | 200 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55 to +150 | ||
| Characteristics at Ta = 25 | Symbol | Min. | Max. | Unit | |
|---|---|---|---|---|---|
| DC Current Gain | at -VCE = 5 V, -IC = 1 mA | hFE | 50 | - | - |
| at -VCE = 5 V, -IC = 10 mA | hFE | 60 | 240 | - | |
| at -VCE = 5 V, -IC = 50 mA | hFE | 50 | - | - | |
| Collector Base Cutoff Current at -VCB = 120 V | -ICBO | - | 50 | nA | |
| Emitter Base Cutoff Current at -VEB = 3 V | -IEBO | - | 50 | nA | |
| Collector Base Breakdown Voltage at -IC = 100 A | -V(BR)CBO | 160 | - | V | |
| Collector Emitter Breakdown Voltage at -IC = 1 mA | -V(BR)CEO | 150 | - | V | |
| Emitter Base Breakdown Voltage at -IE = 10 A | -V(BR)EBO | 5 | - | V | |
| Collector Emitter Saturation Voltage | at -IC = 10 mA, -IB = 1 mA | -VCE(sat) | - | 0.2 | V |
| at -IC = 50 mA, -IB = 5 mA | -VCE(sat) | - | 0.5 | V | |
| Base Emitter Saturation Voltage | at -IC = 10 mA, -IB = 1 mA | -VBE(sat) | - | 1 | V |
| at -IC = 50 mA, -IB = 5 mA | -VBE(sat) | - | 1 | V | |
| Gain Bandwidth Product at -VCE = 10 V, -IC = 10 mA, f = 100 MHz | fT | 100 | 300 | MHz | |
| Output Capacitance at -VCB=10 V, f = 1 MHz | Cobo | - | 6 | pF | |
| Simplified outline(SOT-363) Pinout | |||||
|---|---|---|---|---|---|
| Pin 1 | Pin 2 | Pin 3 | Pin 4 | Pin 5 | Pin 6 |
| Emitter | Base | Collector | Emitter | Base | Collector |
| DIMENSIONS (mm) | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A | A1 | bp | c | D | E | e | e1 | HE | Lp | Q | w | v | y |
| 0.1 | 0.30 | 0.20 | 2.2 | 1.8 | 0.25 | 0.10 | 1.35 | 1.15 | 0.65 | e | 1.3 | 2.2 | 2.0 |
| 0.2 | 0.1 | 0.2 | 0.45 | 0.15 | 0.25 | 0.15 | 1.1 | 0.8 | - | - | - | - | - |
| Fig.1 Max Power Dissipation vs Ambient Temperature | ||||
|---|---|---|---|---|
| Ambient Temperature: Ta () | 0 | 25 | 100 | 150 |
| Power Dissipation: Ptot (mW) | 100 | 200 | 50 | 0 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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