| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 120@2mA,6V |
| Transition frequency(fT) | 80MHz |
| Number | 1 NPN |
| type | NPN |
| Vce Saturation(VCE(sat)) | 250mV@100mA,10mA |
| Pd - Power Dissipation | 150mW |
| Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 150mW Surface Mount SOT-23 |
| Mfr. Part # | 2SC2712-Y |
| Package | SOT-23 |
| Model Number | 2SC2712-Y |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 120@2mA,6V | Transition frequency(fT) | 80MHz |
| Number | 1 NPN | type | NPN |
| Vce Saturation(VCE(sat)) | 250mV@100mA,10mA | Pd - Power Dissipation | 150mW |
| Current - Collector(Ic) | 150mA | Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 150mW Surface Mount SOT-23 |
| Mfr. Part # | 2SC2712-Y | Package | SOT-23 |
| Model Number | 2SC2712-Y |
The 2SC2712 is a NPN transistor designed for high voltage and high current applications. It offers excellent hFE linearity and high DC current gain, making it suitable for various electronic circuits. Key features include a low noise figure, contributing to improved signal integrity in sensitive applications. This transistor is available in different hFE classifications, allowing for precise selection based on gain requirements.
| Parameter | Symbol | Ta = 25 | Unit |
|---|---|---|---|
| Collector-base voltage | VCBO | 60 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 150 | mA |
| Base current | IB | 30 | mA |
| Collector power dissipation | Pc | 150 | mW |
| Junction temperature | Tj | 150 | |
| Storage temperature range | Tstg | -55 to +125 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | VCBO | Ic= 100 A IE= 0 | 60 | V | ||
| Collector-emitter breakdown voltage | VCEO | Ic= 1 mA IB= 0 | 50 | V | ||
| Emitter-base breakdown voltage | VEBO | IE= 100A IC= 0 | 5 | V | ||
| Collector-base cut-off current | ICBO | VCB= 60 V , IE= 0 | 100 | nA | ||
| Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 100 | nA | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=100 mA, IB=10mA | 0.25 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=100 mA, IB=10mA | 1.2 | V | ||
| DC current gain | hFE | VCE=6V, IC= 2mA | 70 | 700 | ||
| 70 | 140 | |||||
| 120 | 240 | |||||
| 200 | 400 | |||||
| 350 | 700 | |||||
| Noise figure | NF | VCE = 6 V, IC = 0.1 mA , f = 1KHz,RG=10K | 1 | 10 | dB | |
| Collector output capacitance | Cob | VCB= 10V, IE= 0,f=1MHz | 2 | 3.5 | pF | |
| Transition frequency | fT | VCE= 10V, IC=1mA | 80 | MHz |
| Type | Range | Marking |
|---|---|---|
| 2SC2712-O | 70-140 | LO |
| 2SC2712-Y | 120-240 | LY |
| 2SC2712-G | 200-400 | LG |
| 2SC2712-L | 350-700 | LL |
| Symbol | Unit | A | A1 | bp | c | D | E | e | e1 | HE | Lp | Q | v | w |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| mm | 0.9 | 0.1 | 0.48 | 0.15 | 0.38 | 1.4 | 1.9 | 2.1 | 0.55 | 0.95 | 0.45 | 0.15 | 0.2 | 0.1 |
| 1.1 | 0.15 | 1.2 | 2.5 | 0.45 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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