| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50nA |
| DC Current Gain | 60@10mA,5V |
| Transition frequency(fT) | 300MHz |
| Number | 1 PNP |
| Vce Saturation(VCE(sat)) | 500mV@50mA,5mA |
| type | PNP |
| Pd - Power Dissipation | 625mW |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 150V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 150V 0.6A 300MHz 625mW Through Hole TO-92 |
| Mfr. Part # | 2N5401 |
| Package | TO-92 |
| Model Number | 2N5401 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50nA |
| DC Current Gain | 60@10mA,5V | Transition frequency(fT) | 300MHz |
| Number | 1 PNP | Vce Saturation(VCE(sat)) | 500mV@50mA,5mA |
| type | PNP | Pd - Power Dissipation | 625mW |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 150V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor PNP 150V 0.6A 300MHz 625mW Through Hole TO-92 |
| Mfr. Part # | 2N5401 | Package | TO-92 |
| Model Number | 2N5401 |
The 2N5401 is a PNP transistor designed for switching and amplification applications. It is particularly suited for high-voltage scenarios, including telephony systems, and operates effectively with low current. This transistor offers high voltage capabilities, making it a reliable component for various electronic circuits.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC= -0.1mA, IE=0 | -160 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -150 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-0.01mA, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-120V, IE=0 | -50 | nA | ||
| Emitter cut-off current | IEBO | VEB=-3V, IC=0 | -50 | nA | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-50mA, IB=-5mA | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-50mA, IB=-5mA | -1 | V | ||
| Transition frequency | fT | VCE=-5V, IC=-10mA, f =30MHz | 100 | 300 | MHz | |
| DC current gain | hFE(1) | VCE=-5V, IC=-1mA | 80 | |||
| DC current gain | hFE(2) | VCE=-5V, IC=-10mA | 60 | 300 | ||
| DC current gain | hFE(3) | VCE=-5V, IC=-50mA | 50 |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -160 | V |
| Collector-Emitter Voltage | VCEO | -150 | V |
| Emitter-Base Voltage | VEBO | -5 | V |
| Collector Current | IC | -0.6 | A |
| Collector Power Dissipation | PC | 625 | mW |
| Thermal Resistance From Junction To Ambient | RJA | 200 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55~+150 |
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| A | 3.300 - 3.700 | 0.130 - 0.146 |
| A1 | 1.100 - 1.400 | 0.043 - 0.055 |
| b | 0.380 - 0.550 | 0.015 - 0.022 |
| c | 0.360 - 0.510 | 0.014 - 0.020 |
| D | 4.300 - 4.700 | 0.169 - 0.185 |
| D1 | 3.430 | 0.135 |
| E | 4.300 - 4.700 | 0.169 - 0.185 |
| e | ||
| e1 | 2.440 - 2.640 | 0.096 - 0.104 |
| L | 14.100 - 14.500 | 0.555 - 0.571 |
| 1.600 | 0.063 | |
| h | 0.000 - 0.380 | 0.000 - 0.015 |
| TYP | TYP | |
|---|---|---|
| 1.270 | 0.050 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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