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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China High gain PNP transistor Slkor S9015 designed for in amplification and switching
China High gain PNP transistor Slkor S9015 designed for in amplification and switching

  1. China High gain PNP transistor Slkor S9015 designed for in amplification and switching

High gain PNP transistor Slkor S9015 designed for in amplification and switching

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
DC Current Gain 200@1mA,5V
Transition frequency(fT) 150MHz
Vce Saturation(VCE(sat)) 300mV
type PNP
Pd - Power Dissipation 200mW
Current - Collector(Ic) 100mA
Collector - Emitter Voltage VCEO 45V
Operating Temperature -
Description Bipolar (BJT) Transistor PNP 45V 0.1A 150MHz 200mW Surface Mount SOT-23
Mfr. Part # S9015
Package SOT-23
Model Number S9015

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
DC Current Gain 200@1mA,5V Transition frequency(fT) 150MHz
Vce Saturation(VCE(sat)) 300mV type PNP
Pd - Power Dissipation 200mW Current - Collector(Ic) 100mA
Collector - Emitter Voltage VCEO 45V Operating Temperature -
Description Bipolar (BJT) Transistor PNP 45V 0.1A 150MHz 200mW Surface Mount SOT-23 Mfr. Part # S9015
Package SOT-23 Model Number S9015

Product Overview

The S9015 is a PNP transistor designed for general-purpose applications. It is complementary to the S9014 and offers a DC current gain (hFE) ranging from 200 to 1000. This transistor is suitable for use in common emitter configurations and is characterized by its collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).

Product Attributes

  • Brand: slkormicro
  • Type: PNP Transistor

Technical Specifications

Electrical Characteristics

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC = -0.1mA, IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50 V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
DC current gain hFE VCE=-5V, IC= -1mA 200 1000
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V
Transition frequency fT VCE=-5V, IC= -10mA, f=30MHz 150 MHz

Maximum Ratings

Parameter Symbol Value Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -100 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance From Junction To Ambient RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55+150

Package Dimensions (SOT-23)

Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e 1.800 - 2.000 0.071 - 0.079
e1 0.300 - 0.500 0.012 - 0.020
L 0.550 REF 0.022 REF
L1 0.950 TYP 0.037 TYP
0 - 8 0 - 8

Pinout

1. BASE
2. EMITTER
3. COLLECTOR


2005211106_Slkor-S9015_C556175.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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