| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 200@1mA,5V |
| Transition frequency(fT) | 150MHz |
| Vce Saturation(VCE(sat)) | 300mV |
| type | PNP |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 45V 0.1A 150MHz 200mW Surface Mount SOT-23 |
| Mfr. Part # | S9015 |
| Package | SOT-23 |
| Model Number | S9015 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 200@1mA,5V | Transition frequency(fT) | 150MHz |
| Vce Saturation(VCE(sat)) | 300mV | type | PNP |
| Pd - Power Dissipation | 200mW | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 45V 0.1A 150MHz 200mW Surface Mount SOT-23 | Mfr. Part # | S9015 |
| Package | SOT-23 | Model Number | S9015 |
The S9015 is a PNP transistor designed for general-purpose applications. It is complementary to the S9014 and offers a DC current gain (hFE) ranging from 200 to 1000. This transistor is suitable for use in common emitter configurations and is characterized by its collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC= -100A, IE=0 | -50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = -0.1mA, IB=0 | -45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-50 V, IE=0 | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= -5V, IC=0 | -0.1 | A | ||
| DC current gain | hFE | VCE=-5V, IC= -1mA | 200 | 1000 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-100mA, IB= -10mA | -0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-100mA, IB=-10mA | -1 | V | ||
| Transition frequency | fT | VCE=-5V, IC= -10mA, f=30MHz | 150 | MHz |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -50 | V |
| Collector-Emitter Voltage | VCEO | -45 | V |
| Emitter-Base Voltage | VEBO | -5 | V |
| Collector Current | IC | -100 | mA |
| Collector Power Dissipation | PC | 200 | mW |
| Thermal Resistance From Junction To Ambient | RJA | 625 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55+150 |
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| A | 0.900 - 1.150 | 0.035 - 0.045 |
| A1 | 0.000 - 0.100 | 0.000 - 0.004 |
| A2 | 0.900 - 1.050 | 0.035 - 0.041 |
| b | 0.300 - 0.500 | 0.012 - 0.020 |
| c | 0.080 - 0.150 | 0.003 - 0.006 |
| D | 2.800 - 3.000 | 0.110 - 0.118 |
| E | 1.200 - 1.400 | 0.047 - 0.055 |
| E1 | 2.250 - 2.550 | 0.089 - 0.100 |
| e | 1.800 - 2.000 | 0.071 - 0.079 |
| e1 | 0.300 - 0.500 | 0.012 - 0.020 |
| L | 0.550 REF | 0.022 REF |
| L1 | 0.950 TYP | 0.037 TYP |
| 0 - 8 | 0 - 8 |
1. BASE
2. EMITTER
3. COLLECTOR
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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