Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 3V |
| Current - Collector Cutoff | 50nA |
| DC Current Gain | 95@30mA,8V |
| type | NPN |
| Pd - Power Dissipation | 1W |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 12V |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 12V 100mA 1W Surface Mount SOT-89 |
| Mfr. Part # | BFU580Q |
| Package | SOT-89 |
| Model Number | BFU580Q |
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Product Specification
| Emitter-Base Voltage(Vebo) | 3V | Current - Collector Cutoff | 50nA |
| DC Current Gain | 95@30mA,8V | type | NPN |
| Pd - Power Dissipation | 1W | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 12V | Operating Temperature | -40℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 12V 100mA 1W Surface Mount SOT-89 | Mfr. Part # | BFU580Q |
| Package | SOT-89 | Model Number | BFU580Q |
The BFU580Q is an NPN silicon epitaxial transistor designed for high-performance microwave and high-frequency applications. Manufactured using silicon epitaxial technology, it offers high power gain, wide bandwidth, low noise, low leakage current, and small junction capacitance. Its larger dynamic range and excellent current linearity make it ideal for medium-power, high-frequency signal amplification. Key applications include CATV video amplifiers, wireless transceiver modules, long-range remote controls, security alarms, and analog/digital cordless phones.
| Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tamb=25) | ||||||
| Collector-Base Voltage | VCBO | 25 | V | |||
| Collector-Emitter Voltage | VCEO | 12 | V | |||
| Emitter-Base Voltage | VEBO | 3 | V | |||
| Collector Current | ICM | 100 | mA | |||
| Power Dissipation | PT | 1000 | mW | |||
| Max Junction Temperature | TJ | -40 | 150 | |||
| Storage Temperature | Tstg | -65 | 150 | |||
| Electrical Characteristics (Tamb=25) | ||||||
| Collector-Base Breakdown Voltage | BVCBO | open emitter | 25 | V | ||
| Collector-Emitter Breakdown Voltage | BVCEO | open base | 12 | V | ||
| Emitter-Base Breakdown Voltage | BVEBO | open collector | 3 | V | ||
| Collector Current | IC | 100 | mA | |||
| Collector Cutoff Current | ICBO | VCB=6V, IE=0 | 0.05 | A | ||
| DC Current Gain | hFE | VCE=8V, IC=30mA | 60 | 95 | 130 | |
| Characteristic Frequency | fT | VCE=8V, IC=30mA, f=900MHz | 10.0 | 10.5 | - | GHz |
| Feedback Capacitance | Cre | IC=iC=0, VCB=8V, f=1MHz | 1.2 | - | pF | |
| Collector Capacitance | CC | IE=ie=0, VCB=8V, f=1MHz | 1.8 | - | pF | |
| Emitter Capacitance | Ce | IC=iC=0, VEB=0.5V, f=1MHz | 3.0 | - | pF | |
| Insertion Power Gain | |S21| | IC=30mA, VCE=8V, f=433MHz | 18.0 | 18.5 | - | dB |
| Insertion Power Gain | |S21| | IC=30mA, VCE=8V, f=900MHz | 13.5 | 14 | - | dB |
| Insertion Power Gain | |S21| | IC=30mA, VCE=8V, f=1800MHz | 8.0 | 8.5 | - | dB |
| Max Unilateral Power Gain | GUM | IC=30mA, VCE=8V, f=433MHz | 19.5 | 20 | - | dB |
| Max Unilateral Power Gain | GUM | IC=30mA, VCE=8V, f=900MHz | 13.5 | 14 | - | dB |
| Max Unilateral Power Gain | GUM | IC=30mA, VCE=8V, f=1.8GHz | 8.0 | 8.5 | - | dB |
| Package Dimensions (Units:mm) | ||||||
| Length | 4.2 | 0.05 | mm | |||
| Width | 4.6 | 0.1 | mm | |||
| Height | 1.6 | 0.15 | mm | |||
| Pitch (Pin 1 to Pin 3) | 2.5 | 0.2 | mm | |||
| Pin Width | 0.45 | 0.1 | mm | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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