Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| Transition frequency(fT) | 300MHz |
| type | NPN+PNP |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 160V |
| Description | Bipolar (BJT) Transistor NPN+PNP 160V 0.2A 300MHz 0.2W Surface Mount SOT-363 |
| Mfr. Part # | MMDT5451 |
| Package | SOT-363 |
| Model Number | MMDT5451 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| Transition frequency(fT) | 300MHz | type | NPN+PNP |
| Pd - Power Dissipation | 200mW | Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 160V | Description | Bipolar (BJT) Transistor NPN+PNP 160V 0.2A 300MHz 0.2W Surface Mount SOT-363 |
| Mfr. Part # | MMDT5451 | Package | SOT-363 |
| Model Number | MMDT5451 |
The MMDT5451 is a series of NPN/PNP Silicon Epitaxial Planar Transistors designed for various applications. These transistors are housed in a SOT-363 package, offering compact integration. The series includes both NPN and PNP types, providing flexibility for circuit design. Key electrical characteristics include DC current gain, breakdown voltages, saturation voltages, current gain bandwidth product, and output capacitance, all detailed across different operating conditions.
| Q1 (NPN Transistor) Maximum Ratings (Ta = 25) | |||
|---|---|---|---|
| Parameter | Symbol | Value | Unit |
| Collector Base Voltage | VCBO | 180 | V |
| Collector Emitter Voltage | VCEO | 160 | V |
| Emitter Base Voltage | VEBO | 6 | V |
| Collector Current | IC | 0.2 | A |
| Power Dissipation | Ptot | 0.2 | W |
| Thermal Resistance Junction to Ambient Air | RJA | 625 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55 to +150 | |
| Q2 (PNP Transistor) Maximum Ratings (Ta = 25) | |||
|---|---|---|---|
| Parameter | Symbol | Value | Unit |
| Collector Base Voltage | -VCBO | 160 | V |
| Collector Emitter Voltage | -VCEO | 150 | V |
| Emitter Base Voltage | -VEBO | 5 | V |
| Collector Current | -IC | 0.2 | A |
| Power Dissipation | Ptot | 0.2 | W |
| Thermal Resistance Junction to Ambient Air | RJA | 625 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55 to +150 | |
| Q1 (NPN Transistor) Electrical Characteristics at Ta = 25 | ||||
|---|---|---|---|---|
| Parameter | Symbol | Min. | Max. | Unit |
| DC Current Gain at VCE = 5 V, IC = 1 mA | hFE | 80 | 300 | - |
| at VCE = 5 V, IC = 10 mA | 100 | - | - | |
| at VCE = 5 V, IC = 50 mA | 30 | - | - | |
| Collector Base Cutoff Current at VCB = 120 V | ICBO | - | 0.05 | A |
| Emitter Base Cutoff Current at VEB = 4 V | IEBO | - | 0.05 | A |
| Collector Base Breakdown Voltage at IC = 100 A | V(BR)CBO | 180 | - | V |
| Collector Emitter Breakdown Voltage at IC = 1 mA | V(BR)CEO | 160 | - | V |
| Emitter Base Breakdown Voltage at IE = 10 A | V(BR)EBO | 6 | - | V |
| Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA | VCE(sat) | - | 0.15 | V |
| at IC = 50 mA, IB = 5 mA | - | 0.2 | V | |
| Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA | VBE(sat) | - | 1 | V |
| at IC = 50 mA, IB = 5 mA | - | 1 | V | |
| Current Gain Bandwidth Product at VCE = 10 V, IC = 10 mA, f = 100 MHz | fT | 100 | 300 | MHz |
| Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz | Cob | - | 6 | pF |
| Q2 (PNP Transistor) Electrical Characteristics at Ta = 25 | ||||
|---|---|---|---|---|
| Parameter | Symbol | Min. | Max. | Unit |
| DC Current Gain at -VCE = 5 V, -IC = 1 mA | hFE | 50 | 300 | - |
| at -VCE = 5 V, -IC = 10 mA | 50 | - | - | |
| at -VCE = 5 V, -IC = 50 mA | - | - | - | |
| Collector Base Cutoff Current at -VCB = 120 V | -ICBO | - | 50 | nA |
| Emitter Base Cutoff Current at -VEB = 3 V | -IEBO | - | 50 | nA |
| Collector Base Breakdown Voltage at -IC = 100 A | -V(BR)CBO | 160 | - | V |
| Collector Emitter Breakdown Voltage at -IC = 1 mA | -V(BR)CEO | 150 | - | V |
| Emitter Base Breakdown Voltage at -IE = 10 A | -V(BR)EBO | 5 | - | V |
| Collector Emitter Saturation Voltage at -IC = 10 mA, -IB =1 mA | -VCE(sat) | - | 0.2 | V |
| at -IC = 50 mA, -IB = 5 mA | - | 0.5 | V | |
| Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA | -VBE(sat) | - | 1 | V |
| at -IC = 50 mA, -IB = 5 mA | - | 1 | V | |
| Current Gain Bandwidth Product at -VCE = 10 V, -IC = 10 mA, f = 100 MHz | fT | 100 | 300 | MHz |
| Output Capacitance at -VCB = 10 V, IE = 0, f = 1 MHz | Cobo | - | 6 | pF |
| DIMENSIONS (mm are the original dimensions) | ||
|---|---|---|
| Symbol | Value | Unit |
| A1 | 0.1 | max |
| bp | 0.30 | |
| c | 0.20 | |
| D | 2.2 | |
| E | 1.8 | |
| e1 | 0.25 | |
| HE | 0.10 | |
| Lp | 1.35 | |
| Q | 1.15 | |
| y | 0.65 | e |
| w | 1.3 | |
| v | 2.2 | |
| 2.0 | ||
| 0.2 | ||
| 0.1 | ||
| 0.2 | ||
| 0.45 | ||
| 0.15 | ||
| 0.25 | ||
| 0.15 | ||
| 1.1 | ||
| 0.8 | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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