Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| DC Current Gain | 400@10mA,5V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 200mV |
| type | NPN |
| Pd - Power Dissipation | 1.5W |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 160V 0.6A 100MHz 1.5W Surface Mount SOT-223 |
| Mfr. Part # | CZT5551 |
| Package | SOT-223 |
| Model Number | CZT5551 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| DC Current Gain | 400@10mA,5V | Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 200mV | type | NPN |
| Pd - Power Dissipation | 1.5W | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V | Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 160V 0.6A 100MHz 1.5W Surface Mount SOT-223 | Mfr. Part # | CZT5551 |
| Package | SOT-223 | Model Number | CZT5551 |
The CZT5551 is an NPN epitaxial planar transistor designed for general-purpose applications that require high breakdown voltages. It offers a high collector-base breakdown voltage of 180V and a collector-emitter breakdown voltage of 160V, making it suitable for demanding electronic circuits.
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | Ic= 100uA, IE=0 | 180 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 1 mA, IB=0 | 160 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 10u A, IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB= 120V, IE=0 | 50 | nA | ||
| Emitter cut-off current | IEBO | VEB= 4V, IC=0 | 50 | nA | ||
| DC current gain (hFE 1) | hFE | VCE= 5V, IC=1mA | 80 | 400 | ||
| DC current gain (hFE 2) | hFE | VCE= 5V, IC=10mA | 80 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC= 10mA , IB= 1mA | 0.15 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC= 10mA, IB= 1mA | 1 | V | ||
| Transition frequency | fT | VCE= 10V, IC= 10mA, f = 100MHz | 160 | MHz | ||
| Collector output capacitance | Cob | VCB= 10V, f=1MHz, IE=0 | 6 | pF | ||
| DC current gain (hFE 3) | hFE | VCE= 5V, IC= 50mA | 50 | 300 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC= 50mA , IB= 5mA | 0.2 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC= 50mA, IB= 5mA | 1 | V |
| Rank | Range |
|---|---|
| A | 80-200 |
| N | 100-240 |
| C | 160-400 |
| Symbol | Parameter | Value | Units |
|---|---|---|---|
| IC | Collector Current-Continuous | 1 | A |
| PD | Total Power Dissipation | 600 | mW |
| VEBO | Emitter-Base Voltage | 6 | V |
| VCEO | Collector-Emitter Voltage | 160 | V |
| VCBO | Collector-Base Voltage | 180 | V |
| Tstg | Storage Temperature | -55~150 | C |
| TJ | Junction Temperature | 150 | C |
| REF | Min. | Max. |
|---|---|---|
| A | 6.70 | 7.30 |
| B | 13 | TYP. |
| C | 2.90 | 3.10 |
| D | 0.02 | 0.10 |
| E | 0 | 10 |
| I | 0.60 | 0.80 |
| J | 2.30 | REF. |
| 1 | 6.30 | 6.70 |
| 2 | 6.30 | 6.70 |
| 3 | 3.30 | 3.70 |
| 4 | 3.30 | 3.70 |
| 5 | 1.40 | 1.80 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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