| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 500nA |
| DC Current Gain | 390@100mA,3V |
| Transition frequency(fT) | 150MHz |
| Number | 1 NPN |
| Vce Saturation(VCE(sat)) | 400mV@500mA,50mA |
| type | NPN |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 800mA |
| Collector - Emitter Voltage VCEO | 32V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 32V 800mA 150MHz 200mW Surface Mount SOT-23 |
| Mfr. Part # | 2SD1781R |
| Package | SOT-23 |
| Model Number | 2SD1781R |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 500nA |
| DC Current Gain | 390@100mA,3V | Transition frequency(fT) | 150MHz |
| Number | 1 NPN | Vce Saturation(VCE(sat)) | 400mV@500mA,50mA |
| type | NPN | Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 800mA | Collector - Emitter Voltage VCEO | 32V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 32V 800mA 150MHz 200mW Surface Mount SOT-23 |
| Mfr. Part # | 2SD1781R | Package | SOT-23 |
| Model Number | 2SD1781R |
The 2SD1781 is a Plastic-Encapsulate Transistor (NPN) designed for various electronic applications. It offers a very low VCE(sat) of less than 0.4 V (Typ.) at an IC/IB ratio of 500mA / 50mA. This transistor complements the 2SB1197 and is suitable for use in common emitter configurations. Key features include a high DC current gain (hFE) and a transition frequency (fT) of 150 MHz. It is packaged in a SOT-23 format.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=50A, IE=0 | 40 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=1mA, IB=0 | 32 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=50A, IC=0 | 5 | V | ||
| Collector Cut-off Current | ICBO | VCB=20V, IE=0 | 0.5 | A | ||
| Emitter Cut-off Current | IEBO | VEB=4V, IC=0 | 0.5 | A | ||
| DC Current Gain | hFE(1) | VCE=3V, IC=100mA | 120 | 390 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=500mA, IB=50mA | 0.4 | V | ||
| Transition Frequency | fT | VCE=5V, IC=50mA, f=100MHz | 150 | MHz | ||
| Collector Output Capacitance | Cob | VCB=10V, IE=0, f=1MHz | 10 | pF |
| Classification of hFE(1) | Rank | Range | Marking |
|---|---|---|---|
| Q | 120-270 | AFQ | |
| R | 180-390 | AFR |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V |
| Collector-Emitter Voltage | VCEO | 32 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 800 | mA |
| Collector Power Dissipation | PC | 200 | mW |
| Thermal Resistance Junction To Ambient | RJA | 625 | /W |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55+150 |
| Symbol | Dimensions In Inches | Dimensions In Millimeters |
|---|---|---|
| A | 0.900 - 1.150 | 0.035 - 0.045 |
| A1 | 0.000 - 0.100 | 0.000 - 0.004 |
| A2 | 0.900 - 1.050 | 0.035 - 0.041 |
| b | 0.300 - 0.500 | 0.012 - 0.020 |
| c | 0.080 - 0.150 | 0.003 - 0.006 |
| D | 2.800 - 3.000 | 0.110 - 0.118 |
| E | 1.200 - 1.400 | 0.047 - 0.055 |
| E1 | 2.250 - 2.550 | 0.089 - 0.100 |
| e | 1.800 - 2.000 | 0.071 - 0.079 |
| e1 | ||
| L | ||
| L1 | 0.300 - 0.500 | 0.012 - 0.020 |
| 0 - 8 | 0 - 8 | |
| REF | 0.550 | 0.022 |
| TYP | 0.950 | 0.037 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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