| Current - Collector Cutoff | - |
| DC Current Gain | 100@10mA,1V |
| Transition frequency(fT) | 300MHz;250MHz |
| Vce Saturation(VCE(sat)) | 300mV |
| type | NPN+PNP |
| Pd - Power Dissipation | 150mW |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN+PNP 40V 200mA 300MHz;;;250MHz 150mW Surface Mount SOT-363 |
| Mfr. Part # | MBT3946 |
| Package | SOT-363 |
| Model Number | MBT3946 |
View Detail Information
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Product Specification
| Current - Collector Cutoff | - | DC Current Gain | 100@10mA,1V |
| Transition frequency(fT) | 300MHz;250MHz | Vce Saturation(VCE(sat)) | 300mV |
| type | NPN+PNP | Pd - Power Dissipation | 150mW |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃@(Tj) | Description | Bipolar (BJT) Transistor NPN+PNP 40V 200mA 300MHz;;;250MHz 150mW Surface Mount SOT-363 |
| Mfr. Part # | MBT3946 | Package | SOT-363 |
| Model Number | MBT3946 |
The MBT3946 is a dual general-purpose NPN+PNP silicon transistor designed for various applications. It offers a combination of NPN and PNP transistors in a single package, providing flexibility for circuit design. This device is suitable for general-purpose amplification and switching applications.
| Symbol | Parameter | NPN Min | NPN Max | PNP Min | PNP Max | Unit | Conditions |
|---|---|---|---|---|---|---|---|
| Maximum Ratings | |||||||
| VCEO | Collector-Emitter Voltage | 40 | -40 | Vdc | |||
| VCBO | Collector-Base Voltage | 60 | -40 | Vdc | |||
| VEBO | Emitter-Base Voltage | 6.0 | -5.0 | Vdc | |||
| IC | Collector Current-Continuous | 200 | -200 | mAdc | |||
| PD | Total Package Dissipation | 833 | mW | TA=25C | |||
| R JA | Thermal Resistance, Junction to Ambient | 150 | C/W | Device Mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. | |||
| TJ, Tstg | Junction and Storage Temperature | -55 | +150 | C | |||
| Off Characteristics | |||||||
| V(BR)CEO | Collector-Emitter Breakdown Voltage | 50 | -40 | Vdc | IC=1.0mAdc, IB=0 | ||
| V(BR)CBO | Collector-Base Breakdown Voltage | 50 | -40 | Vdc | IC=10Adc, IE=0 | ||
| V(BR)EBO | Emitter-Base Breakdown Voltage | 6.0 | -5.0 | Vdc | IE=10Adc, IC=0 | ||
| IBL | Base Cutoff Current | -50 | -50 | nAdc | VCE=30Vdc, VEB=3.0Vdc | ||
| ICEX | Collector Cutoff Current | -50 | -50 | nAdc | VCE=30Vdc, VEB=3.0Vdc | ||
| On Characteristics | |||||||
| hFE | DC Current Gain | 30 | 300 | 30 | 300 | IC=0.1mAdc, VCE=1.0Vdc | |
| hFE | DC Current Gain | 60 | 300 | 60 | 300 | IC=1.0mAdc, VCE=1.0Vdc | |
| hFE | DC Current Gain | 100 | 300 | 100 | 300 | IC=10mAdc, VCE=1.0Vdc | |
| hFE | DC Current Gain | 60 | 300 | 60 | 300 | IC=50mAdc, VCE=1.0Vdc | |
| hFE | DC Current Gain | 30 | 300 | 30 | 300 | IC=100mAdc, VCE=1.0Vdc | |
| VCE(sat) | Collector-Emitter Saturation Voltage | -0.85 | 0.85 | Vdc | IC=10mAdc, IB=1.0mAdc | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | -0.85 | 0.85 | Vdc | IC=50mAdc, IB=5.0mAdc | ||
| VBE(sat) | Base-Emitter Saturation Voltage | -0.95 | 0.95 | Vdc | IC=10mAdc, IB=1.0mAdc | ||
| VBE(sat) | Base-Emitter Saturation Voltage | -0.95 | 0.95 | Vdc | IC=50mAdc, IB=5.0mAdc | ||
| Small-signal Characteristics | |||||||
| fT | Current-Gain-Bandwidth Product | 250 | 250 | MHz | IC=10mAdc, VCE=20Vdc, f=100MHz | ||
| Cobo | Output Capacitance | 1.0 | 1.0 | pF | VCB=5.0Vdc, IE=0, f=1.0MHz | ||
| Cibo | Input Capacitance | 10.0 | 10.0 | pF | VEB=0.5Vdc, IC=0, f=1.0MHz | ||
| hie | Input Impedance | 2.0 | 2.0 | k Ohms | VCE=10Vdc, IC=1.0mAdc, f=1.0kHz | ||
| hre | Voltage Feedback Ratio | 0.1 | 0.1 | x10^-4 | VCE=10Vdc, IC=1.0mAdc, f=1.0kHz | ||
| hfe | Small-Signal Current Gain | 100 | 400 | 100 | 400 | VCE=10Vdc, IC=1.0mAdc, f=1.0kHz | |
| hoe | Output Admittance | 3.0 | 3.0 | mhos | VCE=10Vdc, IC=1.0mAdc, f=1.0kHz | ||
| NF | Noise Figure | 4.0 | 4.5 | dB | VCE=5.0Vdc, IC=100Adc, RS=1.0k ohms, f=1.0kHz | ||
| Switching Characteristics | |||||||
| td | Delay Time | 35 | 35 | ns | Vcc=3.0Vdc, VBE=-0.5Vdc, Ic=10mAdc, IB1=IB2=1.0mAdc | ||
| tr | Rise Time | 35 | 35 | ns | Vcc=3.0Vdc, Ic=10mAdc | ||
| ts | Storage Time | 75 | 75 | ns | Ic=10mAdc, IB1=1.0mAdc | ||
| tf | Fall Time | 35 | 35 | ns | Ic=-10mAdc, VCE=-20Vdc, f=100MHz | ||
| Package Outline Dimensions | |||||||
| Dim | A | B | C | D | E | H | J |
| Min | 0.10 | 1.15 | 2.00 | 0.30 | 1.80 | 0.80 | 0.25 |
| Max | 0.30 | 1.35 | 2.20 | 0.40 | 2.20 | 1.10 | 0.40 |
| Unit | mm | mm | mm | mm | mm | mm | mm |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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