Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 1.5V |
| Current - Collector Cutoff | 30nA |
| DC Current Gain | 160@15mA,3V |
| Transition frequency(fT) | 12GHz |
| Current - Collector(Ic) | 35mA |
| Collector - Emitter Voltage VCEO | 6V |
| Description | 160@15mA,3V 35mA 6V SOT-323 Single Bipolar Transistors RoHS |
| Mfr. Part # | BFR360F |
| Package | SOT-323 |
| Model Number | BFR360F |
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Product Specification
| Emitter-Base Voltage(Vebo) | 1.5V | Current - Collector Cutoff | 30nA |
| DC Current Gain | 160@15mA,3V | Transition frequency(fT) | 12GHz |
| Current - Collector(Ic) | 35mA | Collector - Emitter Voltage VCEO | 6V |
| Description | 160@15mA,3V 35mA 6V SOT-323 Single Bipolar Transistors RoHS | Mfr. Part # | BFR360F |
| Package | SOT-323 | Model Number | BFR360F |
The BFR360F is a high-frequency, low-noise silicon bipolar RF transistor designed for microwave low-noise amplifiers operating at low currents. It is suitable for DC power supply voltages between 3.3V and 5V and can be used in oscillator circuits up to 4.0 GHz. This transistor offers approximately 1.0 dB noise figure at 1.8 GHz, low leakage current, small junction capacitance, and a large dynamic range with good current linearity. Its applications include TV tuners, satellite TV receivers, CATV video amplifiers, analog/digital cordless phones, radar proximity switches, wireless remote data transmission, wireless communications, RFID systems, and fiber optic amplifiers. It is ideal for VHF/UHF amplifiers, oscillators, mixers, detectors, and signal amplification in high-frequency microwave signal transmission and reception circuits.
| Parameter Name | Symbol | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tamb=25) | ||||||
| Collector-Base Breakdown Voltage | BVCBO | 12 | V | |||
| Collector-Emitter Breakdown Voltage | BVCEO | 6 | V | |||
| Emitter-Base Breakdown Voltage | BVEBO | 1.5 | V | |||
| Collector Current | IC | 35 | mA | |||
| Power Dissipation | PT | 300 | mW | |||
| Maximum Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 | |||
| Electrical Characteristics & Specifications (Tamb=25) | ||||||
| Collector-Emitter Breakdown Voltage | BVCEO | IC=1mA, IB=0 | 6 | 9 | V | |
| Collector-Emitter Cutoff Current | ICES | VCE=4V,VBE=0 | 1 | 30 | nA | |
| Collector-Base Cutoff Current | ICBO | VCB=6V,IE=0 | 1 | 30 | nA | |
| Emitter-Base Cutoff Current | IEBO | VEB=6V,IC=0 | 1 | 500 | nA | |
| DC Current Gain | hFE | VCE=3V,IC=15mA | 90 | 120 | 160 | |
| Transition Frequency | fT | VCE=3V,IC=15mA,f=1GHz | 11 | 12 | - | GHz |
| Feedback Capacitance | Cre | IC=iC=0,VCB=5V,f=1MHz | 0.2 | - | pF | |
| Collector Capacitance | Cc | IE=ie=0,VCB=5V,f=1MHz | 0.35 | 0.5 | pF | |
| Emitter Capacitance | Ce | IC=iC=0,VEB=0.5V,f=1MHz | 0.4 | - | pF | |
| Insertion Power Gain | |S21| | VCE=5V,IC=15mA, f=1.8GHz | 9.5 | 10.5 | - | dB |
| Noise Figure | NF | VCE=3V,IC=3mA,f=1.8GHz | 1.0 | - | dB | |
| Maximum Unilateral Power Gain | GUM | VCE=5V,IC=15mA, f=1.8GHz | 11.5 | 12.5 | - | dB |
| Output Third Order Intercept Point | IP3 | VCE=3V,IC=15mA, ZS=ZL=50, f=1.8GHz | 20 | - | dBm | |
SOT-323 Package Dimensions (Units:mm)
Pin Connections:
(Diagrams for package dimensions and pin connections are provided in the source document.)
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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