Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 2.5V |
| Current - Collector Cutoff | 50nA |
| DC Current Gain | 300@80mA,8V |
| Transition frequency(fT) | 8.5GHz |
| Number | 1 NPN |
| type | NPN |
| Pd - Power Dissipation | 2W |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 15V |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 15V 200mA 8.5GHz 2W Surface Mount SOT-89 |
| Mfr. Part # | BFU590Q |
| Package | SOT-89 |
| Model Number | BFU590Q |
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Product Specification
| Emitter-Base Voltage(Vebo) | 2.5V | Current - Collector Cutoff | 50nA |
| DC Current Gain | 300@80mA,8V | Transition frequency(fT) | 8.5GHz |
| Number | 1 NPN | type | NPN |
| Pd - Power Dissipation | 2W | Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 15V | Operating Temperature | -40℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 15V 200mA 8.5GHz 2W Surface Mount SOT-89 | Mfr. Part # | BFU590Q |
| Package | SOT-89 | Model Number | BFU590Q |
The BFU590Q is an NPN silicon epitaxial transistor designed for microwave low-noise amplifier applications. Manufactured using silicon epitaxial process technology, it offers high power gain, wide bandwidth, low noise, low leakage current, and small junction capacitance. Its large dynamic range and excellent current linearity make it ideal for UHF microwave and high-frequency broadband low-noise amplifiers. Typical applications include CATV video amplifiers, wireless transceiver modules, remote control systems, security alarms, and analog/digital cordless phones, suitable for medium-power high-frequency signal amplification.
General Characteristics:
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | open emitter | 25 | 35 | V | |
| Collector-Emitter Breakdown Voltage | BVCEO | open base | 15 | 19 | V | |
| Emitter-Base Breakdown Voltage | BVEBO | open collector | 2.5 | 3.5 | V | |
| Collector Current | IC | 200 | mA | |||
| Collector Cutoff Current | ICBO | VCB=6V, IE=0 | 0.05 | A | ||
| DC Current Gain | hFE | VCE=8V, IC=80mA | 60 | 130 | 300 | |
| Characteristic Frequency | fT | VCE=8V, IC=80mA, f=900MHz | 8.0 | 8.5 | GHz | |
| Feedback Capacitance | Cre | IC=iC=0, VCB=8V, f=1MHz | 1.2 | pF | ||
| Collector Capacitance | CC | IE=ie=0, VCB=8V, f=1MHz | 1.8 | pF | ||
| Emitter Capacitance | Ce | IC=iC=0, VEB=0.5V, f=1MHz | 3.0 | pF | ||
| Insertion Power Gain | |S21| | IC=80mA, VCE=8V, f=433MHz | 17.0 | 18.0 | dB | |
| Insertion Power Gain | |S21| | IC=80mA, VCE=8V, f=900MHz | 11.0 | 12.0 | dB | |
| Insertion Power Gain | |S21| | IC=80mA, VCE=8V, f=1800MHz | 5.0 | 5.5 | dB | |
| Maximum Unilateral Power Gain | GUM | IC=80mA, VCE=8V, f=433MHz | 18.0 | 19.5 | dB | |
| Maximum Unilateral Power Gain | GUM | IC=80mA, VCE=8V, f=900MHz | 11.5 | 12.5 | dB | |
| Maximum Unilateral Power Gain | GUM | IC=80mA, VCE=8V, f=1.8GHz | 6.5 | 7.0 | dB |
Absolute Maximum Ratings (Tamb=25):
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 25 | V |
| Collector-Emitter Voltage | VCEO | 15 | V |
| Emitter-Base Voltage | VEBO | 2.5 | V |
| Collector Current | ICM | 300 | mA |
| Power Dissipation | PT | 2000 | mW |
| Maximum Junction Temperature | TJ | -40150 | |
| Storage Temperature | Tstg | -65+150 |
Package Dimensions (Units:mm):
| Dimension | Value (mm) |
|---|---|
| Length | 4.60.1 |
| Width | 4.20.05 |
| Height | 1.60.15 |
| Lead Length (Typical) | 1.5Typical |
| Pin Pitch (Typical) | 0.450.1 |
| Body Thickness (Typical) | 0.50.1 |
| Base Width (Typical) | 1.50.2 |
Pin Connections:
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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