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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
  • Verified Supplier
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China PNP Power Transistor Silkor 2SB1261 Featuring Low Collector Saturation Voltage
China PNP Power Transistor Silkor 2SB1261 Featuring Low Collector Saturation Voltage

  1. China PNP Power Transistor Silkor 2SB1261 Featuring Low Collector Saturation Voltage

PNP Power Transistor Silkor 2SB1261 Featuring Low Collector Saturation Voltage

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Current - Collector Cutoff 10uA
Emitter-Base Voltage(Vebo) 7V
DC Current Gain 400@0.6A,2V
Vce Saturation(VCE(sat)) 300mV@1.5A,0.15A
type PNP
Pd - Power Dissipation 10W
Current - Collector(Ic) 3A
Collector - Emitter Voltage VCEO 60V
Description Bipolar (BJT) Transistor PNP 60V 3A Surface Mount TO-252
Mfr. Part # 2SB1261
Package TO-252
Model Number 2SB1261

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  1. Product Details
  2. Company Details

Product Specification

Current - Collector Cutoff 10uA Emitter-Base Voltage(Vebo) 7V
DC Current Gain 400@0.6A,2V Vce Saturation(VCE(sat)) 300mV@1.5A,0.15A
type PNP Pd - Power Dissipation 10W
Current - Collector(Ic) 3A Collector - Emitter Voltage VCEO 60V
Description Bipolar (BJT) Transistor PNP 60V 3A Surface Mount TO-252 Mfr. Part # 2SB1261
Package TO-252 Model Number 2SB1261

Product Overview

Silicon PNP Power Transistors designed for audio amplifier and switching applications, particularly in hybrid integrated circuits. These transistors offer a low collector saturation voltage and high power dissipation capability of up to 10W (Max) at TC=25. They are engineered for robust device performance and reliable operation with minimum lot-to-lot variations.

Product Attributes

  • Brand: SLKORMicro (implied by website domain)
  • Type: PNP Power Transistor

Technical Specifications

Symbol Parameter Conditions Min Typ. Max Unit
ABSOLUTE MAXIMUM RATINGS (Ta=25)
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -7 V
IC Collector Current-Continuous -3 A
PC Collector Power Dissipation @TC=25 10 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 ~ 150
ELECTRICAL CHARACTERISTICS (Tj=25 unless otherwise specified)
V(BR)CBO Collector-Base Breakdown Voltage IC= -100A ; IE= 0 -60 V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 -60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE= -100A; IC= 0 -7 V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -0.3 V
VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.2 V
ICBO Collector Cutoff Current VCB= -60V; IE= 0 -10 A
IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -10 A
hFE-1 DC Current Gain IC= -0.2A; VCE= -2V 60
hFE-2 DC Current Gain IC= -0.6A; VCE= -2V 100 400
hFE-3 DC Current Gain IC= -2A; VCE= -2V 50
hFE2 Classifications
M 100 - 200
L 160 - 320
K 200 - 400
Model 2SB1261

2410121549_Slkor-2SB1261_C5122565.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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