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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Low voltage drop transistor Slkor 2SC5585 featuring high current capability for
China Low voltage drop transistor Slkor 2SC5585 featuring high current capability for

  1. China Low voltage drop transistor Slkor 2SC5585 featuring high current capability for

Low voltage drop transistor Slkor 2SC5585 featuring high current capability for

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Current - Collector Cutoff 100nA
Emitter-Base Voltage(Vebo) 6V
DC Current Gain 680@10mA,2V
Transition frequency(fT) 320MHz
Vce Saturation(VCE(sat)) 250mV@200mA,10mA
Pd - Power Dissipation 150mW
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 12V
Description 680@10mA,2V 150mW 500mA 12V SOT-523 Single Bipolar Transistors RoHS
Mfr. Part # 2SC5585
Package SOT-523
Model Number 2SC5585

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  1. Product Details
  2. Company Details

Product Specification

Current - Collector Cutoff 100nA Emitter-Base Voltage(Vebo) 6V
DC Current Gain 680@10mA,2V Transition frequency(fT) 320MHz
Vce Saturation(VCE(sat)) 250mV@200mA,10mA Pd - Power Dissipation 150mW
Current - Collector(Ic) 500mA Collector - Emitter Voltage VCEO 12V
Description 680@10mA,2V 150mW 500mA 12V SOT-523 Single Bipolar Transistors RoHS Mfr. Part # 2SC5585
Package SOT-523 Model Number 2SC5585

Product Overview

This NPN transistor offers high current capability with a low VCE(sat) of 250mV at IC = 200mA / IB = 10mA. It is suitable for applications requiring efficient power handling and low voltage drop. The transistor is available in a SOT-523 package.

Product Attributes

  • Marking: BX
  • Package Type: SOT-523 Plastic-Encapsulate Transistors

Technical Specifications

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 15 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 12 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=15 V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A
DC current gain hFE VCE=2V, IC=10mA 270 680
Collector-emitter saturation voltage VCE(sat) IC=200mA,IB=10mA 0.25 V
Transition frequency fT VCE=2V,IC=10mA, f=100MHz 320 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 7.5 pF
Parameter Symbol Value Unit
Collector- Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
Collector Current -Continuous IC 0.5 A
Collector Power Dissipation PC 0.15 W
Junction Temperature TJ 150
Storage Temperature Tstg -55-150
Pin Name
1 BASE
2 EMITTER
3 COLLECTOR

2508051530_Slkor-2SC5585_C50087593.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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