| Emitter-Base Voltage(Vebo) | 4V |
| Current - Collector Cutoff | 500nA |
| DC Current Gain | 200@1mA,6V |
| Transition frequency(fT) | 550MHz |
| Number | 1 NPN |
| type | NPN |
| Vce Saturation(VCE(sat)) | 400mV@100mA,10mA |
| Pd - Power Dissipation | 100mW |
| Current - Collector(Ic) | 20mA |
| Collector - Emitter Voltage VCEO | 30V |
| Description | Bipolar (BJT) Transistor NPN 30V 20mA 550MHz 100mW Surface Mount SOT-23 |
| Mfr. Part # | 2SC2714-Y |
| Package | SOT-23 |
| Model Number | 2SC2714-Y |
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Product Specification
| Emitter-Base Voltage(Vebo) | 4V | Current - Collector Cutoff | 500nA |
| DC Current Gain | 200@1mA,6V | Transition frequency(fT) | 550MHz |
| Number | 1 NPN | type | NPN |
| Vce Saturation(VCE(sat)) | 400mV@100mA,10mA | Pd - Power Dissipation | 100mW |
| Current - Collector(Ic) | 20mA | Collector - Emitter Voltage VCEO | 30V |
| Description | Bipolar (BJT) Transistor NPN 30V 20mA 550MHz 100mW Surface Mount SOT-23 | Mfr. Part # | 2SC2714-Y |
| Package | SOT-23 | Model Number | 2SC2714-Y |
The 2SC2714 is an NPN transistor designed for general-purpose applications. It offers a collector current capability of 20mA and a collector-emitter voltage of 30V. This transistor is available in the SOT-23 package, making it suitable for compact electronic designs. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 200, a collector-emitter saturation voltage (VCE(sat)) of up to 0.4V, and a transition frequency (fT) of 550 MHz. The device is classified into different hFE ranges (R, O, Y) for specific gain requirements.
| Parameter | Symbol | Test Conditions | Rating | Unit |
|---|---|---|---|---|
| Features | ||||
| Collector Current Capability | IC | 20 | mA | |
| Collector Emitter Voltage | VCEO | 30 | V | |
| Absolute Maximum Ratings (Ta = 25) | ||||
| Collector - Base Voltage | VCBO | 40 | V | |
| Collector - Emitter Voltage | VCEO | 30 | V | |
| Emitter - Base Voltage | VEBO | 4 | V | |
| Collector Current - Continuous | IC | 20 | mA | |
| Collector Power Dissipation | PC | 100 | mW | |
| Thermal Resistance Junction to Ambient | RJA | 1000 | /W | |
| Junction Temperature | TJ | 125 | ||
| Storage Temperature Range | Tstg | -55 to 125 | ||
| Electrical Characteristics (Ta = 25) | ||||
| Collector-base breakdown voltage | VCBO | Ic= 100 A, IE= 0 | 40 | V |
| Collector-emitter breakdown voltage | VCEO | Ic= 1 mA, IB= 0 | 30 | V |
| Emitter-base breakdown voltage | VEBO | IE= 100A, IC= 0 | 4 | V |
| Collector-base cut-off current | ICBO | VCB= 18 V, IE= 0 | 0.5 | A |
| Emitter cut-off current | IEBO | VEB= 4V, IC=0 | 0.5 | A |
| Collector-emitter saturation voltage | VCE(sat) | IC=100 mA, IB=10mA | 0.4 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=100 mA, IB=10mA | 1.2 | V |
| DC current gain | hFE | VCE= 6V, IC= 1mA | 40 - 200 | |
| Noise Figure | NF | VCE= 6V, IE= -1mA, f=100MHz | 2.5 - 5 | dB |
| Reverse Transfer capacitance | Cre | VCB= 6V, IE= 0, f=1MHz | 0.7 | pF |
| Transition frequency | fT | VCE= 6V, IC= 1mA | 550 | MHz |
| Classification of hfe | ||||
| Type | Range | Marking | ||
| 2SC2714-R | 40-80 | QR | ||
| 2SC2714-O | 70-140 | QO | ||
| 2SC2714-Y | 100-200 | QY | ||
| Dimensions (SOT-23) (mm) | ||||
| A | 1.1 max. | |||
| A1 | 0.1 | |||
| bp | 0.48 | |||
| c | 0.38 | |||
| D | 3.0 | |||
| E | 2.8 | |||
| e | 1.9 | |||
| e1 | 1.4 | |||
| HE | 2.5 | |||
| Lp | 0.95 | |||
| Q | 0.55 | |||
| w | 0.45 | |||
| v | 0.15 | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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