| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 250nA |
| DC Current Gain | 200@10mA,10V |
| Transition frequency(fT) | 50MHz |
| Vce Saturation(VCE(sat)) | 200mV@20mA,2mA |
| type | NPN |
| Pd - Power Dissipation | 350mW |
| Current - Collector(Ic) | 300mA |
| Collector - Emitter Voltage VCEO | 300V |
| Description | Bipolar (BJT) Transistor NPN 300V 0.3A Surface Mount SOT-23 |
| Mfr. Part # | MMBTA42 |
| Package | SOT-23 |
| Model Number | MMBTA42 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 250nA |
| DC Current Gain | 200@10mA,10V | Transition frequency(fT) | 50MHz |
| Vce Saturation(VCE(sat)) | 200mV@20mA,2mA | type | NPN |
| Pd - Power Dissipation | 350mW | Current - Collector(Ic) | 300mA |
| Collector - Emitter Voltage VCEO | 300V | Description | Bipolar (BJT) Transistor NPN 300V 0.3A Surface Mount SOT-23 |
| Mfr. Part # | MMBTA42 | Package | SOT-23 |
| Model Number | MMBTA42 |
The MMBTA42 is an NPN transistor designed for high breakdown voltage applications. It features a low collector-emitter saturation voltage, making it suitable for various electronic circuits. This transistor is complementary to the MMBTA92 (PNP) transistor.
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 300 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 1mA, IB=0 | 300 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100A, IC=0 | 5 | V | |
| Collector cut-off current | ICBO | VCB=200V, IE=0 | 0.25 | A | |
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | |
| DC current gain | hFE(1) | VCE= 10V, IC= 1mA | 60 | ||
| DC current gain | hFE(2) | VCE= 10V, IC=10mA | 100 | 200 | |
| DC current gain | hFE(3) | VCE=10V, IC=30mA | 60 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=20mA, IB= 2mA | 0.2 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC= 20mA, IB=2mA | 0.9 | V | |
| Transition frequency | fT | VCE= 20V, IC= 10mA, f=30MHz | 50 | MHz |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 300 | V |
| Collector-Emitter Voltage | VCEO | 300 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current-Continuous | IC | 0.3 | A |
| Collector Power dissipation | PC | 0.35 | W |
| Thermal Resistance, junction to Ambient | RJA | 357 | /W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55 to +150 |
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| A | 0.900 - 1.150 | 0.035 - 0.045 |
| A1 | 0.000 - 0.100 | 0.000 - 0.004 |
| A2 | 0.900 - 1.050 | 0.035 - 0.041 |
| b | 0.300 - 0.500 | 0.012 - 0.020 |
| c | 0.080 - 0.150 | 0.003 - 0.006 |
| D | 2.800 - 3.000 | 0.110 - 0.118 |
| E | 1.200 - 1.400 | 0.047 - 0.055 |
| E1 | 2.250 - 2.550 | 0.089 - 0.100 |
| e | 1.800 - 2.000 | 0.071 - 0.079 |
| e1 | 0.300 - 0.500 | 0.012 - 0.020 |
| L | 0.550 REF | 0.022 REF |
| L1 | 0.950 TYP | 0.037 TYP |
| 0 - 8 | 0 - 8 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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