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Hefei Purple Horn E-Commerce Co., Ltd.

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China Dual NPN Small Signal Surface Mount Transistor Slkor MMDT4401 with Epitaxial
China Dual NPN Small Signal Surface Mount Transistor Slkor MMDT4401 with Epitaxial

  1. China Dual NPN Small Signal Surface Mount Transistor Slkor MMDT4401 with Epitaxial

Dual NPN Small Signal Surface Mount Transistor Slkor MMDT4401 with Epitaxial

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Current - Collector Cutoff 100nA
Emitter-Base Voltage(Vebo) 6V
Transition frequency(fT) 250MHz
Number 2 NPN
type NPN
Pd - Power Dissipation 200mW
Current - Collector(Ic) 600mA
Collector - Emitter Voltage VCEO 40V
Description Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 200mW Surface Mount SOT-363
Mfr. Part # MMDT4401
Package SOT-363
Model Number MMDT4401

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  1. Product Details
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Product Specification

Current - Collector Cutoff 100nA Emitter-Base Voltage(Vebo) 6V
Transition frequency(fT) 250MHz Number 2 NPN
type NPN Pd - Power Dissipation 200mW
Current - Collector(Ic) 600mA Collector - Emitter Voltage VCEO 40V
Description Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 200mW Surface Mount SOT-363 Mfr. Part # MMDT4401
Package SOT-363 Model Number MMDT4401

Product Overview

The MMDT4401 is a dual NPN small signal surface mount transistor featuring epitaxial planar die construction and an ultra-small surface mount package. It is ideal for low power amplification and switching applications. This transistor is designed for general-purpose use in dual NPN configurations within surface mount systems.

Product Attributes

  • Package Type: SOT-363
  • Construction: Epitaxial planar die
  • Mounting Type: Surface Mount

Technical Specifications

Parameter Symbol Test Conditions Min Max Unit
MAXIMUM RATINGS @ Ta=25 unless otherwise specified
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current - Continuous IC 600 mA
Power Dissipation PD 200 mW
Thermal Resistance, Junction to Ambient RJA 625 /W
Junction and Storage Temperature Tj,Tstg -55 +150
ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 60 - V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 - V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 6 - V
Collector cut-off current ICEX VCE=35V, VEB(OFF)=0.4V - 0.1 A
Base cut-off current IBL VCE=35V, VEB(OFF)=0.4V - 0.1 A
DC current gain hFE VCE=1V, IC=0.1mA 20 -
VCE=1V, IC=1.0mA 40 -
VCE=1V, IC=10mA 80 -
VCE=1V, IC=150mA 100 -
VCE=2V, IC=500mA 40 -
Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA - 0.4 V
IC=500mA, IB=50mA - 0.75 V
Base-emitter saturation voltage VBE(sat) IC=150mA, IB=15mA 0.75 - V
IC=500mA, IB=50mA 0.95 1.2 V
Transition frequency fT VCE=10V, IC=20mA, f=1MHz 250 MHz
Output Capacitance Cobo VCB=5V, f=1.0MHz, IE=0 - 6.5 pF
Input Capacitance Cibo VEB=0.5V, f=1.0MHz, IC=0 - 30 pF
Delay time td VCC=30V, VBE(off)=2V, IC=150mA, IB1=15mA - 15 ns
Rise time tr VCC=30V, VBE(off)=2V, IC=150mA, IB1=15mA - 20 ns
Storage time ts VCC=30V, IC=150mA, IB1=IB2=15mA - 225 ns
Fall time tf VCC=30V, IC=150mA, IB1=IB2=15mA - 30 ns

Package Information

Device Package Shipping
MMDT4401 SOT-363 3000/Tape&Reel

Package Outline (SOT-363)

Dim Min Max Unit
A 2.00 2.20 mm
B 1.15 1.35 mm
C 0.95 - Typical
D 0.25 - Typical
E 0.25 0.40 mm
G 0.60 0.70 mm
H 0.02 0.10 mm
J 0.10 - Typical
K 2.2 2.4 mm

2309281727_Slkor-MMDT4401_C18208604.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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