| Current - Collector Cutoff | 100uA |
| DC Current Gain | 500 |
| Vce Saturation(VCE(sat)) | 1.5V |
| type | NPN |
| Pd - Power Dissipation | 40W |
| Current - Collector(Ic) | 6A |
| Collector - Emitter Voltage VCEO | 300V |
| Description | 500 NPN 40W 6A 300V TO-220 Single Bipolar Transistors RoHS |
| Mfr. Part # | 2SD1071 |
| Package | TO-220 |
| Model Number | 2SD1071 |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 100uA | DC Current Gain | 500 |
| Vce Saturation(VCE(sat)) | 1.5V | type | NPN |
| Pd - Power Dissipation | 40W | Current - Collector(Ic) | 6A |
| Collector - Emitter Voltage VCEO | 300V | Description | 500 NPN 40W 6A 300V TO-220 Single Bipolar Transistors RoHS |
| Mfr. Part # | 2SD1071 | Package | TO-220 |
| Model Number | 2SD1071 |
This Silicon NPN Darlington Power Transistor offers low collector saturation voltage and high DC current gain, ensuring high reliability and minimum lot-to-lot variations for robust device performance. It is suitable for applications including audio power amplifiers, relay and solenoid drivers, motor controls, and general-purpose power amplifiers. The device includes an integrated zener diode.
| Symbol | Parameter | Conditions | Value | Unit |
|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS (Ta=25) | ||||
| VCBO | Collector-Base Voltage | 450 | V | |
| VCEO(SUS) | Collector-Emitter Voltage | 300 | V | |
| VEBO | Emitter-Base Voltage | 6 | V | |
| VZ | Zener Voltage | 300 | V | |
| IC | Collector Current-Continuous | 6 | A | |
| IB | Base Current-Continuous | 2.5 | A | |
| PC | Collector Power Dissipation @ TC=25 | 40 | W | |
| TJ | Junction Temperature | 150 | ||
| Tstg | Storage Temperature Range | -40~150 | ||
| THERMAL CHARACTERISTICS | ||||
| Rth j-c | Thermal Resistance,Junction to Case | 3.0 | /W | |
| ELECTRICAL CHARACTERISTICS (TC=25 unless otherwise specified) | ||||
| VZ | Zener Voltage | IZ= 0.1mA | 300 | 450 V |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 5mA; IC= 0 | 6 | V |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4A; IB= 15mA | 1.5 | V |
| VBE(sat) | Base-Emitter Saturation Voltage | IC= 4A; IB= 15mA | 2.0 | V |
| ICBO | Collector Cutoff Current | VCB= 300V; IE= 0 | 0.1 | mA |
| IEBO | Emitter Cutoff Current | VEB= 6V; IC=0 | 5 | mA |
| hFE | DC Current Gain | IC= 4A; VCE= 2V | 500 | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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