Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | 100nA |
| Emitter-Base Voltage(Vebo) | 7V |
| DC Current Gain | 1000@0.1A,2V |
| Vce Saturation(VCE(sat)) | 170mV@300mA,6mA |
| type | NPN |
| Pd - Power Dissipation | 2W |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Bipolar (BJT) Transistor NPN 50V 1A 2W Surface Mount SC-62 |
| Mfr. Part # | 2SC5810(TE12L,F) |
| Package | SC-62 |
| Model Number | 2SC5810(TE12L,F) |
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Product Specification
| Current - Collector Cutoff | 100nA | Emitter-Base Voltage(Vebo) | 7V |
| DC Current Gain | 1000@0.1A,2V | Vce Saturation(VCE(sat)) | 170mV@300mA,6mA |
| type | NPN | Pd - Power Dissipation | 2W |
| Current - Collector(Ic) | 1A | Collector - Emitter Voltage VCEO | 50V |
| Description | Bipolar (BJT) Transistor NPN 50V 1A 2W Surface Mount SC-62 | Mfr. Part # | 2SC5810(TE12L,F) |
| Package | SC-62 | Model Number | 2SC5810(TE12L,F) |
The TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications. It is suitable for DC-DC converters and strobe applications, offering high DC current gain (hFE = 400 to 1000), low collector-emitter saturation voltage (VCE (sat) = 0.17 V max), and fast switching speeds (tf = 85 ns typ.).
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = 100 V, IE = 0 | 100 | nA | ||
| Emitter cut-off current | IEBO | VEB = 7 V, IC = 0 | 100 | nA | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10 mA, IB = 0 | 50 | V | ||
| DC current gain | hFE (1) | VCE = 2 V, IC = 0.1 A | 400 | 1000 | ||
| hFE (2) | VCE = 2 V, IC = 0.3 A | 200 | ||||
| Collector-emitter saturation voltage | VCE (sat) | IC = 300 mA, IB = 6 mA | 0.17 | V | ||
| Base-emitter saturation voltage | VBE (sat) | IC = 300 mA, IB = 6 mA | 1.10 | V | ||
| Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1 MHz | 5 | pF | ||
| Switching time | Rise time | See Figure 1. | 35 | ns | ||
| Storage time | See Figure 1. | 680 | ns | |||
| Fall time | See Figure 1. | 85 | ns |
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 100 | V |
| Collector-emitter voltage | VCEX | 80 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 7 | V |
| Collector current (DC) | IC | 1.0 | A |
| Collector current (Pulse) | ICP | 2.0 | A |
| Base current (DC) | IB | 0.1 | A |
| Collector power dissipation (t = 10 s) | PC (Note 1) | 1.0 | W |
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | -55 to 150 | C |
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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