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Hefei Purple Horn E-Commerce Co., Ltd.

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China Medium power PNP silicon transistor UTC 2SB772SG-P-AB3-R optimized for audio
China Medium power PNP silicon transistor UTC 2SB772SG-P-AB3-R optimized for audio

  1. China Medium power PNP silicon transistor UTC 2SB772SG-P-AB3-R optimized for audio

Medium power PNP silicon transistor UTC 2SB772SG-P-AB3-R optimized for audio

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 1uA
DC Current Gain 160@1A,2V
Transition frequency(fT) 80MHz
Vce Saturation(VCE(sat)) 500mV@2A,0.2A
type PNP
Pd - Power Dissipation 500mW
Current - Collector(Ic) 3A
Collector - Emitter Voltage VCEO 30V
Operating Temperature -
Description Bipolar (BJT) Transistor PNP 30V 3A 80MHz 0.5W Surface Mount SOT-89
Mfr. Part # 2SB772SG-P-AB3-R
Package SOT-89
Model Number 2SB772SG-P-AB3-R

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  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 1uA
DC Current Gain 160@1A,2V Transition frequency(fT) 80MHz
Vce Saturation(VCE(sat)) 500mV@2A,0.2A type PNP
Pd - Power Dissipation 500mW Current - Collector(Ic) 3A
Collector - Emitter Voltage VCEO 30V Operating Temperature -
Description Bipolar (BJT) Transistor PNP 30V 3A 80MHz 0.5W Surface Mount SOT-89 Mfr. Part # 2SB772SG-P-AB3-R
Package SOT-89 Model Number 2SB772SG-P-AB3-R

Product Overview

The UTC 2SB772S is a medium power, low voltage PNP silicon transistor designed for audio power amplifier, DC-DC converter, and voltage regulator applications. It offers a high current output up to 3A, low saturation voltage, and is a complement to the 2SD882S.

Product Attributes

  • Brand: UNISONIC TECHNOLOGIES CO., LTD
  • Product Type: PNP SILICON TRANSISTOR
  • Certifications: Lead Free, Halogen Free

Technical Specifications

ParameterSymbolTest ConditionsRatingUnit
Collector-Base VoltageVCBO-40V
Collector-Emitter VoltageVCEO-30V
Emitter-Base VoltageVEBO-5V
Peak Collector CurrentICP-7A
DC Collector CurrentIC-3A
Base CurrentIB-0.6A
Power DissipationPDSOT-890.5W
SOT-2231W
TO-920.5W
Junction TemperatureTJ+150C
Storage TemperatureTSTG-55 ~ +150C
Collector-Base Breakdown VoltageBVCBOIC=-100A, IE=0-40V
Collector-Emitter Breakdown VoltageBVCEOIC=-1mA, IB=0-30V
Emitter-Base Breakdown VoltageBVEBOIE=-100A, IC=0-5V
Collector Cut-Off CurrentICBOVCB=-30V, IE=0-1000nA
Collector Cut-Off CurrentICEOVCE=-30V, IB=0-1000nA
Emitter Cut-Off CurrentIEBOVEB=-3V, IC=0-1000nA
DC Current GainhFE1VCE=-2V, IC=-20mA30 ~ 200
VCE=-2V, IC=-1A100 ~ 400
Collector-Emitter Saturation VoltageVCE(SAT)IC=-2A, IB=-0.2A-0.3 ~ -0.5V
Base-Emitter Saturation VoltageVBE(SAT)IC=-2A, IB=-0.2A-1.0 ~ -2.0V
Current Gain Bandwidth ProductfTVCE=-5V, IC=-0.1A80MHz
Output CapacitanceCOBVCB=-10V, IE=0, f=1MHz45pF

1809172043_UTC-2SB772SG-P-AB3-R_C146664.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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