| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 5uA |
| DC Current Gain | 80@1A,5V |
| Transition frequency(fT) | 30MHz |
| type | PNP |
| Vce Saturation(VCE(sat)) | 3V@800mA,8A |
| Pd - Power Dissipation | 150W |
| Current - Collector(Ic) | 15A |
| Collector - Emitter Voltage VCEO | 230V |
| Description | Bipolar (BJT) Transistor PNP 230V 15A 30MHz 150W Through Hole TO-3P(N) |
| Mfr. Part # | 2SA1943N(S1,E,S) |
| Package | TO-3P(N) |
| Model Number | 2SA1943N(S1,E,S) |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 5uA |
| DC Current Gain | 80@1A,5V | Transition frequency(fT) | 30MHz |
| type | PNP | Vce Saturation(VCE(sat)) | 3V@800mA,8A |
| Pd - Power Dissipation | 150W | Current - Collector(Ic) | 15A |
| Collector - Emitter Voltage VCEO | 230V | Description | Bipolar (BJT) Transistor PNP 230V 15A 30MHz 150W Through Hole TO-3P(N) |
| Mfr. Part # | 2SA1943N(S1,E,S) | Package | TO-3P(N) |
| Model Number | 2SA1943N(S1,E,S) |
The 2SA1943N is a silicon PNP triple-diffused bipolar transistor designed for power amplification applications. It features a high collector voltage of -230 V (min) and is complementary to the 2SC5200N. This transistor is recommended for the output stage of 100-W high-fidelity audio frequency amplifiers.
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ. | Max |
| Collector-base voltage | VCBO | -230 | V | ||||
| Collector-emitter voltage | VCEO | -230 | V | ||||
| Emitter-base voltage | VEBO | -5 | V | ||||
| Collector current (DC) | IC | -15 | A | ||||
| Base current | IB | -1.5 | A | ||||
| Collector power dissipation | PC | 150 | W | Tc = 25 | |||
| Junction temperature | Tj | 150 | |||||
| Storage temperature | Tstg | -55 to 150 | |||||
| Junction-to-case thermal resistance | Rth(j-c) | /W | 0.83 | ||||
| Collector cut-off current | ICBO | A | VCB = -230 V, IE = 0 A | -5.0 | |||
| Emitter cut-off current | IEBO | A | VEB = -5 V, IC = 0 A | -5.0 | |||
| Collector-emitter breakdown voltage | V(BR)CEO | -230 | V | IC = -50 mA, IB = 0 A | |||
| DC current gain | hFE(1) | 80 | VCE = -5 V, IC = -1 A | 160 | |||
| DC current gain | hFE(2) | 35 | VCE = -5 V, IC = -7 A | ||||
| Collector-emitter saturation voltage | VCE(sat) | V | IC = -8 A, IB = -0.8 A | -1.1 | -3.0 | ||
| Base-emitter voltage | VBE | V | VCE = -5 V, IC = -7 A | -0.97 | -1.5 | ||
| Transition frequency | fT | MHz | VCE = -5 V, IC = -1 A | 30 | |||
| Collector output capacitance | Cob | pF | VCB = -10 V, IE = 0 A, f = 1 MHz | 360 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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