| Current - Collector Cutoff | 100nA |
| DC Current Gain | 100@10mA,1V |
| Transition frequency(fT) | 300MHz |
| Vce Saturation(VCE(sat)) | 300mV |
| type | NPN |
| Pd - Power Dissipation | 320mW |
| Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 50V |
| Description | Bipolar (BJT) Transistor NPN 50V 150mA 300MHz 320mW Surface Mount SOT-23 |
| Mfr. Part # | TMBT3904,LM |
| Package | SOT-23 |
| Model Number | TMBT3904,LM |
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Product Specification
| Current - Collector Cutoff | 100nA | DC Current Gain | 100@10mA,1V |
| Transition frequency(fT) | 300MHz | Vce Saturation(VCE(sat)) | 300mV |
| type | NPN | Pd - Power Dissipation | 320mW |
| Current - Collector(Ic) | 150mA | Collector - Emitter Voltage VCEO | 50V |
| Description | Bipolar (BJT) Transistor NPN 50V 150mA 300MHz 320mW Surface Mount SOT-23 | Mfr. Part # | TMBT3904,LM |
| Package | SOT-23 | Model Number | TMBT3904,LM |
The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high current capabilities, with a VCEO of 50 V and IC of 150 mA (max). It is complementary to the TMBT3906.
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = 60 V, IE = 0 mA | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB = 5 V, IC = 0 mA | 0.1 | A | ||
| DC current gain | hFE | VCE = 1 V, IC = 0.1 mA | 60 | |||
| VCE = 1 V, IC = 1 mA | 80 | |||||
| VCE = 1 V, IC = 10 mA | 100 | 300 | ||||
| VCE = 1 V, IC = 50 mA | 60 | |||||
| Collector-emitter saturation voltage | VCE (sat) | IC = 10 mA, IB = 1 mA | 0.2 | V | ||
| Collector-emitter saturation voltage | VCE (sat) | IC = 50 mA, IB = 5 mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE (sat) | IC = 10 mA, IB = 1 mA | 0.65 | 0.85 | V | |
| Base-emitter saturation voltage | VBE (sat) | IC = 50 mA, IB = 5 mA | 0.95 | V | ||
| Transition frequency | fT | VCE = 20 V, IC = 10 mA | 300 | MHz | ||
| Noise figure | NF | VCE = 5 V, IC = 0.1 mA, f = 1 kHz, Rg = 1 k | 5 | dB | ||
| Switching times (delay time) | td | IC = 10mA, IB1 = -IB2 = 1mA | 35 | ns | ||
| Switching times (rise time) | tr | IC = 10mA, IB1 = -IB2 = 1mA | 35 | ns | ||
| Switching times (storage time) | ts | IC = 10mA, IB1 = -IB2 = 1mA | 200 | ns | ||
| Switching times (fall time) | tf | IC = 10mA, IB1 = -IB2 = 1mA | 50 | ns |
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 60 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 150 | mA |
| Base current | IB | 30 | mA |
| Collector power dissipation (Note 1) | PC | 320 | mW |
| Collector power dissipation (Note 2) | PC | 1000 | mW |
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | -55 to 150 | C |
Note 1: Mounted on an FR4 board. (25.4mm x 25.4mm x 1.6mm, Cu Pad: 0.42mm2 x 3)
Note 2: Mounted on an FR4 board. (25.4mm x 25.4mm x 1.6mm, Cu Pad: 645mm2)
SOT23
Weight: 0.009g (typ.)
L W
1. Base
2. Emitter
3. Collector
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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