| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 70@2mA,6V |
| Transition frequency(fT) | 80MHz |
| Vce Saturation(VCE(sat)) | 100mV |
| type | PNP |
| Pd - Power Dissipation | 120mW |
| Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 120mW Surface Mount SC-75(SOT-416) |
| Mfr. Part # | 2SA1832-GR,LF |
| Package | SC-75(SOT-416) |
| Model Number | 2SA1832-GR,LF |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 70@2mA,6V | Transition frequency(fT) | 80MHz |
| Vce Saturation(VCE(sat)) | 100mV | type | PNP |
| Pd - Power Dissipation | 120mW | Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 50V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 120mW Surface Mount SC-75(SOT-416) | Mfr. Part # | 2SA1832-GR,LF |
| Package | SC-75(SOT-416) | Model Number | 2SA1832-GR,LF |
The 2SA1832 is a silicon PNP epitaxial bipolar transistor designed for low-frequency amplifier applications. It offers high voltage (VCEO = -50 V) and high collector current (IC = -150 mA max) capabilities, along with excellent hFE linearity. This transistor is AEC-Q101 qualified and is complementary to the 2SC4738, available in a small SSM package.
| Orderable Part Number | AEC-Q101 | Usage |
| 2SA1832-O | YES | General Use |
| 2SA1832-Y | YES | General Use |
| 2SA1832-GR | YES | General Use |
| 2SA1832-O,LF | YES | General Use |
| 2SA1832-O,LXGF | YES | Unintended Use |
| 2SA1832-O,LXHF | YES | Automotive Use |
| 2SA1832-Y,LF | YES | General Use |
| 2SA1832-Y,LXGF | YES | Unintended Use |
| 2SA1832-Y,LXHF | YES | Automotive Use |
| 2SA1832-GR,LF | YES | General Use |
| 2SA1832-GR,LXGF | YES | Unintended Use |
| 2SA1832-GR,LXHF | YES | Automotive Use |
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Collector-base voltage | VCBO | -50 | V | |
| Collector-emitter voltage | VCEO | -50 | V | |
| Emitter-base voltage | VEBO | -5 | V | |
| Collector current (DC) | IC | -150 | mA | (Note 2), (Note 4) |
| Base current | IB | -30 | mA | (Note 3) |
| Collector power dissipation | PC | 120 | mW | (Note 2) |
| Collector power dissipation | PC | 80 | mW | (Note 3) |
| Junction temperature | Tj | 150 | °C | (Note 2), (Note 4) |
| Storage temperature | Tstg | -55 to 150 | °C | |
| Collector cut-off current | ICBO | -0.1 | µA | VCB = -50 V, IE = 0 A |
| Emitter cut-off current | IEBO | -0.1 | µA | VEB = -5 V, IC = 0 mA |
| DC current gain | hFE | 70 to 400 | VCE = -6 V, IC = -2 mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC = -100 mA, IB = -10 mA |
| Transition frequency | fT | 80 | MHz | VCE = -10 V, IC = -1 mA |
| Collector output capacitance | Cob | 7 | pF | VCB = -10 V, IE = 0 A, f = 1 MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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