| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 1uA |
| DC Current Gain | 120@100mA,3V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 400mV |
| type | PNP |
| Pd - Power Dissipation | 500mW |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 80V 1A 100MHz 500mW Surface Mount SOT-89 |
| Mfr. Part # | 2SB1260G-Q-AB3-R |
| Package | SOT-89 |
| Model Number | 2SB1260G-Q-AB3-R |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 1uA |
| DC Current Gain | 120@100mA,3V | Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 400mV | type | PNP |
| Pd - Power Dissipation | 500mW | Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 80V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 80V 1A 100MHz 500mW Surface Mount SOT-89 | Mfr. Part # | 2SB1260G-Q-AB3-R |
| Package | SOT-89 | Model Number | 2SB1260G-Q-AB3-R |
The UTC 2SB1260 is an epitaxial planar type PNP silicon transistor designed for high breakdown voltage and high current applications. It offers good hFE linearity and low VCE(SAT), making it suitable for various power transistor needs.
| Parameter | Symbol | SOT-89 | TO-252 | Unit | Conditions |
| Collector-Base Voltage | VCBO | -80 | V | ||
| Collector-Emitter Voltage | VCEO | -80 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Peak Collector Current | ICM | -2 | A | (single pulse, Pw=100ms) | |
| DC Collector Current | IC | -1 | A | ||
| Power Dissipation | PD | 0.5 | 1.9 | W | (TA=25C, Note 1) |
| Junction Temperature | TJ | +150 | |||
| Storage Temperature | TSTG | -40 ~ +150 | |||
| Collector Base Breakdown Voltage | BVCBO | -80 | V | IC= -50A | |
| Collector Emitter Breakdown Voltage | BVCEO | -80 | V | IC= -1mA | |
| Emitter Base Breakdown Voltage | BVEBO | -5 | V | IE= -50A | |
| Collector Cut-Off Current | ICBO | -1 | A | VCB=-60V | |
| Emitter Cut-Off Current | IEBO | -1 | A | VEB=-4V | |
| DC Current Gain | hFE | 82 ~ 390 | VCE=-3V, IOUT=-0.1A (Note 1) | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.4 | V | IC=-500mA, IB=-50mA | |
| Transition Frequency | fT | 100 | MHz | VCE= -5V, IE=50mA, f=30MHz | |
| Output Capacitance | Cob | 25 | pF | VCB=-10V, IE=0, f=1MHz | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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