Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| DC Current Gain | 300@10mA,5V |
| Transition frequency(fT) | 300MHz |
| Vce Saturation(VCE(sat)) | 200mV@50mA,5mA |
| Pd - Power Dissipation | 300mW |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V |
| Description | 300@10mA,5V 300mW 600mA 160V SOT-23 Single Bipolar Transistors RoHS |
| Mfr. Part # | MMBT5551 200-300 |
| Package | SOT-23 |
| Model Number | MMBT5551 200-300 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| DC Current Gain | 300@10mA,5V | Transition frequency(fT) | 300MHz |
| Vce Saturation(VCE(sat)) | 200mV@50mA,5mA | Pd - Power Dissipation | 300mW |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 160V |
| Description | 300@10mA,5V 300mW 600mA 160V SOT-23 Single Bipolar Transistors RoHS | Mfr. Part # | MMBT5551 200-300 |
| Package | SOT-23 | Model Number | MMBT5551 200-300 |
The MMBT5551 is a high voltage, fast-switching NPN power transistor. It is characterized by its high breakdown voltage, high current gain, and high switching speed, making it ideal for medium power amplification and switching applications. It is complementary to the MMBT5401.
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | |||||
| Collector-base voltage | VCBO | TC=25C | 180 | V | |
| Collector-emitter voltage | VCEO | TC=25C | 160 | V | |
| Emitter-base voltage | VEBO | TC=25C | 6 | V | |
| Collector current | IC | TC=25C | 0.6 | A | |
| Collector Power Dissipation | PC | TC=25C | 300 | mW | |
| Junction Temperature | Tj | 150 | C | ||
| Storage Temperature | Tstg | -55 | 150 | C | |
| Thermal Resistance Junction To Ambient | RJA | 416 | C/W | ||
| ELECTRICAL CHARACTERISTICS | |||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 180 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO* | IC=1mA,IB=0 | 160 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 6 | V | |
| Collector cutoff current | ICBO | VCB=120V,IE=0 | 50 | nA | |
| Emitter cut-off current | IEBO | VEB=4V,IC=0 | 50 | nA | |
| DC Current Gain (hFE1) | hFE1* | VCE=5V,IC=1mA | 80 | ||
| DC Current Gain (hFE2 - Classification A) | hFE2* | VCE=5V,IC=10mA | 100 | 200 | |
| DC Current Gain (hFE2 - Classification B) | hFE2* | VCE=5V,IC=10mA | 200 | 300 | |
| DC Current Gain (hFE2 - Classification C) | hFE2* | VCE=5V,IC=10mA | 300 | 450 | |
| DC Current Gain (hFE3) | hFE3* | VCE=5V,IC=50mA | 50 | ||
| Collector-emitter saturation voltage | VCE(sat)* | IC=10mA,IB=1mA | 0.15 | V | |
| Collector-emitter saturation voltage | VCE(sat)* | IC=50mA,IB=5mA | 0.2 | V | |
| Base-Emitter Saturation Voltage | VBE(sat)* | IC=10mA,IB=1mA | 1 | V | |
| Base-Emitter Saturation Voltage | VBE(sat)* | IC=50mA,IB=5mA | 1 | V | |
| Transition frequency | fT | VCE=10V, IC= 10mA, f=100MHz | 100 | 300 | MHz |
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 6 | pF | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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