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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Audio Frequency Amplifier Transistor TOSHIBA 2SA1162-GR LF Silicon PNP with Low
China Audio Frequency Amplifier Transistor TOSHIBA 2SA1162-GR LF Silicon PNP with Low

  1. China Audio Frequency Amplifier Transistor TOSHIBA 2SA1162-GR LF Silicon PNP with Low

Audio Frequency Amplifier Transistor TOSHIBA 2SA1162-GR LF Silicon PNP with Low

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
DC Current Gain 70@2mA,6V
Transition frequency(fT) 80MHz
Vce Saturation(VCE(sat)) 300mV@100mA,10mA
type PNP
Pd - Power Dissipation 150mW
Current - Collector(Ic) 150mA
Collector - Emitter Voltage VCEO 50V
Operating Temperature -55℃~+125℃
Description Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 150mW Surface Mount TO-236-3(SOT-23-3)
Mfr. Part # 2SA1162-GR,LF
Package TO-236-3(SOT-23-3)
Model Number 2SA1162-GR,LF

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
DC Current Gain 70@2mA,6V Transition frequency(fT) 80MHz
Vce Saturation(VCE(sat)) 300mV@100mA,10mA type PNP
Pd - Power Dissipation 150mW Current - Collector(Ic) 150mA
Collector - Emitter Voltage VCEO 50V Operating Temperature -55℃~+125℃
Description Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 150mW Surface Mount TO-236-3(SOT-23-3) Mfr. Part # 2SA1162-GR,LF
Package TO-236-3(SOT-23-3) Model Number 2SA1162-GR,LF

Product Overview

The 2SA1162 is a silicon PNP epitaxial transistor from TOSHIBA, utilizing the PCT process. It is designed for general-purpose amplifier applications in audio frequencies. Key advantages include high voltage and current capabilities (VCEO = -50 V, IC = -150 mA max), excellent hFE linearity, high hFE (70 to 400), low noise (NF = 1dB typ.), and a complementary pairing with the 2SC2712. It comes in a small package.

Product Attributes

  • Brand: TOSHIBA
  • Type: Silicon PNP Epitaxial Transistor
  • Process: PCT process
  • Applications: Audio Frequency General Purpose Amplifier
  • Complementary to: 2SC2712
  • Package: JEDEC TO-236MOD (JEITA SC-59)
  • Weight: 0.012 g (typ.)
  • Start of commercial production: 1982-12

Technical Specifications

CharacteristicsSymbolTest ConditionMinTyp.MaxUnit
Collector cut-off currentICBOVCB = -50 V, IE = 0---0.1µA
Emitter cut-off currentIEBOVEB = -5 V, IC = 0---0.1µA
DC current gainhFEVCE = -6 V, IC = -2 mA70-400-
Collector-emitter saturation voltageVCE (sat)IC = -100 mA, IB = -10 mA--0.1-0.3V
Transition frequencyfTVCE = -10 V, IC = -1 mA80--MHz
Collector output capacitanceCobVCB = -10 V, IE = 0, f = 1 MHz-47pF
Noise figureNFVCE = -6 V, IC = -0.1 mA, f = 1 kHz, Rg = 10 kΩ-1.010dB

Absolute Maximum Ratings

CharacteristicsSymbolRatingUnit
Collector-base voltageVCBO-50V
Collector-emitter voltageVCEO-50V
Emitter-base voltageVEBO-5V
Collector currentIC-150mA
Base currentIB-30mA
Collector power dissipationPC150mW
Junction temperatureTj125°C
Storage temperature rangeTstg-55 to 125°C

2410121836_TOSHIBA-2SA1162-GR-LF_C155455.pdf

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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