Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 1uA |
| DC Current Gain | 140@500mA,5V |
| Transition frequency(fT) | 180MHz |
| Vce Saturation(VCE(sat)) | 150mV |
| type | NPN |
| Pd - Power Dissipation | 1W |
| Current - Collector(Ic) | 4A |
| Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Surface Mount SOT-223 |
| Mfr. Part # | PZT1816G-S-AA3-R |
| Package | SOT-223 |
| Model Number | PZT1816G-S-AA3-R |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 1uA |
| DC Current Gain | 140@500mA,5V | Transition frequency(fT) | 180MHz |
| Vce Saturation(VCE(sat)) | 150mV | type | NPN |
| Pd - Power Dissipation | 1W | Current - Collector(Ic) | 4A |
| Collector - Emitter Voltage VCEO | 100V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Surface Mount SOT-223 | Mfr. Part # | PZT1816G-S-AA3-R |
| Package | SOT-223 | Model Number | PZT1816G-S-AA3-R |
The UNISONIC PZT1816 is an NPN planar transistor designed for high current switching applications. It features a low collector-to-emitter saturation voltage, good linearity of hFE, and a small, slim package that facilitates compact set designs. With a high transition frequency (fT) and fast switching speed, this transistor is suitable for demanding electronic circuits.
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | BVCBO | IC =10A, IE =0 | 120 | V | ||
| Collector-Emitter Breakdown Voltage | BVCEO | IC =1mA, RB= | 100 | V | ||
| Emitter-Base Breakdown Voltage | BVEBO | IE =10A, IC=0 | 6 | V | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | IC = 2A, IB =0.2A | 0.9 | 1.2 | V | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC = 2A, IB=0.2A | 150 | 400 | mV | |
| Collector Cut-Off Current | ICBO | VCB = 100 V, IE =0 | 1 | A | ||
| Emitter Cut-Off Current | IEBO | VEB = 4V, IC=0 | 1 | A | ||
| DC Current Transfer Ratio (hFE1) | hFE1 | VCE = 5V, IC = 0.5A | 70 | 400 | ||
| DC Current Transfer Ratio (hFE2) | hFE2 | VCE =5V, IC = 3A | 40 | |||
| Transition Frequency | fT | VCE =10V, IC =0.5A | 180 | MHz | ||
| Output Capacitance | Cob | VCB =10V, IE =0A, f =1MHz | 40 | pF | ||
| Turn-on Time | tON | See test circuit | 100 | ns | ||
| Storage Time | tSTG | See test circuit | 900 | ns | ||
| Fall Time | tF | See test circuit | 50 | ns |
| Parameter | Symbol | Rating | Unit |
| Collector-Base Voltage | VCBO | 120 | V |
| Collector-Emitter Voltage | VCEO | 100 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current DC | IC | 4 | A |
| Collector Current PULSE (Note 2) | IC | 8 | A |
| Power Dissipation | PD | 1 | W |
| Junction Temperature | TJ | +150 | C |
| Storage Temperature | TSTG | -40 ~ +150 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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